Syrbu Nicolae N, Zalamai Victor V, Stamov Ivan G, Beril Stepan I
Laboratory of Micro-Optoelectronics, Technical University of Moldova, 168 Stefan cel Mare Avenue, 2004 Chisinau, Republic of Moldova.
National Center for Materials Study and Testing, Technical University of Moldova, Bv. Stefan cel Mare 168, Chisinau 2004, Republic of Moldova.
Beilstein J Nanotechnol. 2020 Jul 16;11:1045-1053. doi: 10.3762/bjnano.11.89. eCollection 2020.
The optical anisotropy of the SbSe crystals was investigated at 300 and 11 K. Excitonic features of four excitons (A, B, C, and D) were observed in the optical spectra of the SbSe single crystals and in the photoelectric spectra of the Me-SbSe structures. The exciton parameters, such as the ground ( = 1) and excited ( = 2) state positions and the binding energy (Ry), were determined. The effective mass of the electrons at the bottom of the conduction band ( = 0.67 ) as well as the holes at the four top valence bands ( = 3.32 , = 3.83 , = 3.23 and = 3.23 ) were calculated in the Г-point of the Brillouin zone. The magnitude of the valence band splitting V-V due to the spin-orbit interaction (Δ = 35 meV) and the crystal field (Δ = 13 meV) were estimated in the Brillouin zone center. The energy splitting between the bands V-V was 191 meV. The identified features were discussed based on both the theoretically calculated energy band structure and the excitonic band symmetry in the Brillouin zone ( = 0) for crystals with an orthorhombic symmetry (). The photoelectric properties of the Me-SbS structures were investigated in the spectral range 1-1.8 eV under ||c and ⟂c polarization conditions and at different applied voltages.
在300K和11K温度下研究了SbSe晶体的光学各向异性。在SbSe单晶的光谱以及Me - SbSe结构的光电光谱中观察到了四个激子（A、B、C和D）的激子特征。确定了激子参数，如基态（ = 1）和激发态（ = 2）位置以及结合能（Ry）。在布里渊区的Г点计算了导带底部电子的有效质量（ = 0.67 ）以及四个最高价带中空穴的有效质量（ = 3.32 ， = 3.83 ， = 3.23 和 = 3.23 ）。在布里渊区中心估计了由于自旋 - 轨道相互作用（Δ = 35 meV）和晶体场（Δ = 13 meV）导致的价带分裂V - V的大小。带V - V之间的能量分裂为191 meV。基于理论计算的能带结构以及具有正交对称性（）的晶体在布里渊区（ = 0）中的激子带对称性，对所识别的特征进行了讨论。在||c和⟂c极化条件下以及不同施加电压下，在1 - 1.8 eV光谱范围内研究了Me - SbS结构的光电特性。
