Suppr超能文献

利用光学光谱研究单层过渡金属二卤族化合物中的自旋极化电子能带结构。

Probing the Spin-Polarized Electronic Band Structure in Monolayer Transition Metal Dichalcogenides by Optical Spectroscopy.

机构信息

Department of Physics and Center for 2-Dimensional and Layered Materials, The Pennsylvania State University , University Park, Pennsylvania 16802-6300, United States.

Department of Physics, Case Western Reserve University , Cleveland, Ohio 44106-7079, United States.

出版信息

Nano Lett. 2017 Feb 8;17(2):740-746. doi: 10.1021/acs.nanolett.6b03855. Epub 2017 Jan 23.

Abstract

We study the electronic band structure in the K/K' valleys of the Brillouin zone of monolayer WSe and MoSe by optical reflection and photoluminescence spectroscopy on dual-gated field-effect devices. Our experiment reveals the distinct spin polarization in the conduction bands of these compounds by a systematic study of the doping dependence of the A and B excitonic resonances. Electrons in the highest-energy valence band and the lowest-energy conduction band have antiparallel spins in monolayer WSe and parallel spins in monolayer MoSe. The spin splitting is determined to be hundreds of meV for the valence bands and tens of meV for the conduction bands, which are in good agreement with first-principles calculations. These values also suggest that both n- and p-type WSe and MoSe can be relevant for spin- and valley-based applications.

摘要

我们通过双栅场效应器件上的光学反射和光致发光光谱研究了单层 WSe 和 MoSe 的布里渊区 K/K' 谷中的电子能带结构。通过系统研究 A 和 B 激子共振的掺杂依赖性,我们的实验揭示了这些化合物导带中明显的自旋极化。单层 WSe 中最高能量价带和最低能量导带中的电子具有相反的自旋,而单层 MoSe 中的电子具有平行的自旋。价带的自旋分裂被确定为数百毫电子伏特,而导带的自旋分裂为数十毫电子伏特,这与第一性原理计算结果非常吻合。这些值还表明,n 型和 p 型 WSe 和 MoSe 都可能与基于自旋和谷的应用相关。

文献AI研究员

20分钟写一篇综述,助力文献阅读效率提升50倍。

立即体验

用中文搜PubMed

大模型驱动的PubMed中文搜索引擎

马上搜索

文档翻译

学术文献翻译模型,支持多种主流文档格式。

立即体验