Afsaneh E, Bagheri Harouni M
Department of Physics, Faculty of Science, University of Isfahan, Hezar Jerib St. Isfahan 81764-73441, Iran.
Department of Physics, Quantum optics group, University of Isfahan, Hezar Jerib St. Isfahan 81764-73441, Iran.
Heliyon. 2020 Jul 22;6(7):e04484. doi: 10.1016/j.heliyon.2020.e04484. eCollection 2020 Jul.
We demonstrate the generation of robust entanglement of a quantum dot molecular system in a voltage-controlled junction. To improve the quantum information characteristics of this system, we propose an applicable protocol which contains the implementation of asymmetric quantum dots as well as the engineering of reservoirs. Quantum dots can provide asymmetric coupling coefficients due to the tunable energy barriers through the gap voltage changes. To engineer the reservoirs, superconducting leads are used to prepare a voltage-biased Josephson junction. The high-controllability properties of this system give the arbitrary magnitude of entanglement by the arrangement of parameters. Significantly, the perfect entanglement can be achieved for an asymmetric structure in response to the increase of bias voltage, and also it continues saturated with the near-unit amount.
我们展示了在电压控制结中量子点分子系统强纠缠的产生。为了改善该系统的量子信息特性，我们提出了一种适用方案，其中包括非对称量子点的实现以及库的工程设计。由于通过能隙电压变化可调节的能垒，量子点能够提供非对称耦合系数。为了对库进行工程设计，使用超导引线制备一个电压偏置的约瑟夫森结。该系统的高可控性使得通过参数设置可实现任意大小的纠缠。值得注意的是，对于非对称结构，随着偏置电压的增加可实现完美纠缠，并且其以接近单位量持续饱和。
