Dependence of RF/Analog and Linearity Figure of Merits on Temperature in Ferroelectric FinFET: A Simulation Study.

This article presents a simulation study of the impact of variation in temperature on the transfer characteristics and the RF/analog performance like transconductance ( g ), gate capacitance ( C ), cutoff frequency ( f ), and transconductance frequency product (TFP) of the ferroelectric FinFET (Fe-FinFET). In addition, the impact of temperature on the linearity parameters such as higher order harmonics ( g and g ), second- and third-order voltage intercept points (VIP and VIP), third-order power-intercept point (IIP), third-order intermodulation distortion (IMD), and 1-dB compression point is estimated for wide variation of temperature in the Fe-FinFET. It is seen that temperature has a significant impact on the RF/analog and linearity parameters, and these figure of merits (FoMs) are the functions of temperature. Analysis reports that RF/analog parameters are suppressed, whereas the linearity FoMs are improved as temperature changed from 250 to 350 K.