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单金属栅和双金属栅无结晶体管的线性度与互调失真分析

Linearity and intermodulation distortion analysis of single and dual metal gate junctionless transistor.

作者信息

Awadhiya Bhaskar, Ratnakumar Rahul, Kumar Sampath, Yadav Sameer, Nigam Kaushal, Nanjappa Yashwanth, Kondekar P N

机构信息

Department of Electronics and Communication Engineering, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal, Udupi, Karnataka, 576104, India.

Department of Electronics and Communication, Koneru Lakshmaiah Education Foundation, Green Fields, Vaddeswaram, Guntur, Andhra Pradesh, 522302, India.

出版信息

Heliyon. 2024 Jun 3;10(11):e32325. doi: 10.1016/j.heliyon.2024.e32325. eCollection 2024 Jun 15.

DOI:10.1016/j.heliyon.2024.e32325
PMID:38947435
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11214480/
Abstract

Linearity and intermodulation distortion are very crucial parameters for RFICs design. Therefore, in this work, a detailed comparative analysis on linearity and intermodulation distortion of single metal (SMG) and double metal (DMG) double gate junction less transistor (JLT) is done using TCAD silvaco suite. Furthermore, the effects of temperature fluctuation, gate length variation, and gate material engineering on the linearity performance of both devices are also studied. A few significant figures of merit, including Voltage Intercept Point 2 (VIP2), Voltage Intercept Point 3 (VIP3), Third Order Intercept Power (IIP3), 1 dB Compression Point (P1dB), Third Order Intermodulation Distortion (IMD3), and the transconductance derivative parameters First Order Transconductance (gm1), Second Order Transconductance (gm2), and Third Order Transconductance (gm3) are used to assess the device linearity and intermodulation distortion of SMG and DMG JLT's. The findings show that higher VIP2, VIP3, IIP3, 1-dB compression point and lower gm3, IMD3 values are obtained for the SMG JLT device when compared to its counterpart DMG JLT. SMG JLT, which assures strong linearity and low distortion.

摘要

线性度和互调失真是射频集成电路(RFIC)设计中非常关键的参数。因此,在本工作中,使用TCAD Silvaco套件对单金属(SMG)和双金属(DMG)双栅无结晶体管(JLT)的线性度和互调失真进行了详细的对比分析。此外,还研究了温度波动、栅长变化和栅极材料工程对这两种器件线性度性能的影响。使用了一些重要的品质因数,包括二阶电压截点(VIP2)、三阶电压截点(VIP3)、三阶截获功率(IIP3)、1dB压缩点(P1dB)、三阶互调失真(IMD3)以及跨导导数参数一阶跨导(gm1)、二阶跨导(gm2)和三阶跨导(gm3)来评估SMG和DMG JLT器件的线性度和互调失真。研究结果表明,与对应的DMG JLT相比,SMG JLT器件具有更高的VIP2、VIP3、IIP3、1dB压缩点以及更低的gm3、IMD3值。SMG JLT确保了强线性度和低失真。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/630a/11214480/f992590db1e0/gr5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/630a/11214480/5cda11a13d27/gr1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/630a/11214480/c186903ba163/gr2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/630a/11214480/248bd3b43967/gr3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/630a/11214480/2eab3fd54faa/gr4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/630a/11214480/f992590db1e0/gr5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/630a/11214480/5cda11a13d27/gr1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/630a/11214480/c186903ba163/gr2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/630a/11214480/248bd3b43967/gr3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/630a/11214480/2eab3fd54faa/gr4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/630a/11214480/f992590db1e0/gr5.jpg

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本文引用的文献

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A steep-slope transistor based on abrupt electronic phase transition.一种基于突变电子相变的陡坡晶体管。
Nat Commun. 2015 Aug 7;6:7812. doi: 10.1038/ncomms8812.
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Tunnel field-effect transistors as energy-efficient electronic switches.隧道场效应晶体管作为节能电子开关。
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