Park Seungkyu, Sung Jaekyung, Chae Sujong, Hong Jaehyung, Lee Taeyong, Lee Yoonkwang, Cha Hyungyeon, Kim Sung Youb, Cho Jaephil
Department of Energy Engineering and School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.
Energy & Environment Directorate, Pacific Northwest National Laboratory (PNNL), 902 Battelle Boulevard, Richland, Washington 99354, United States.
ACS Nano. 2020 Sep 22;14(9):11548-11557. doi: 10.1021/acsnano.0c04013. Epub 2020 Aug 21.
Silicon for anodes in lithium-ion batteries has received much attention owing to its superior specific capacity. There has been a rapid increase of research related to void engineering to address the silicon failure mechanism stemming from the massive volume change during (dis)charging in the past decade. Nevertheless, conventional synthetic methods require complex synthetic procedures and toxic reagents to form a void space, so they have an obvious limitation to reach practical application. Here, we introduce SiC consisting of nanocrystallite Si embedded in the inactive matrix of β-SiC to fabricate various types of void structures using thermal etching with a scalable one-pot CVD method. The structural features of SiC make the carbonaceous template possible to be etched selectively without Si oxidation at high temperature with an air atmosphere. Furthermore, bottom-up gas phase synthesis of SiC ensures atomically identical structural features (.., homogeneously distributed Si and β-SiC) regardless of different types of sacrificial templates. For these reasons, various types of SiC hollow structures having shells, tubes, and sheets can be synthesized by simply employing different morphologies of the carbon template. As a result, the morphological effect of different hollow structures can be deeply investigated as well as the free volume effect originating from void engineering from both a electrochemical and computational point of view. In terms of selective thermal oxidation, the SiC hollow shell achieves a much higher initial Coulombic efficiency (>89%) than that of the Si hollow shell (65%) because of its nonoxidative property originating from structural characteristics of SiC during thermal etching. Moreover, the findings based on the clearly observed different electrochemical features between half-cell and full-cell configuration give insight into further Si anode research.
锂离子电池阳极用硅因其卓越的比容量而备受关注。在过去十年中,为解决因(充)放电过程中大量体积变化导致的硅失效机制,与孔隙工程相关的研究迅速增加。然而,传统的合成方法需要复杂的合成步骤和有毒试剂来形成孔隙空间,因此在实际应用方面存在明显局限性。在此,我们引入由嵌入β - SiC惰性基质中的纳米晶硅组成的SiC,通过可扩展的一锅化学气相沉积(CVD)方法进行热蚀刻来制造各种类型的孔隙结构。SiC的结构特征使得在空气气氛下高温时能够选择性地蚀刻碳质模板而不发生硅氧化。此外,SiC的自下而上气相合成确保了无论牺牲模板类型如何,都具有原子级相同的结构特征(即均匀分布的硅和β - SiC)。基于这些原因,通过简单地采用不同形态的碳模板,可以合成具有壳、管和片等各种类型的SiC中空结构。结果,从电化学和计算的角度,既可以深入研究不同中空结构的形态效应,也可以研究孔隙工程产生的自由体积效应。就选择性热氧化而言,由于热蚀刻过程中SiC的结构特性使其具有非氧化性,SiC中空壳的初始库仑效率(>89%)比Si中空壳(65%)高得多。此外,基于在半电池和全电池配置中清楚观察到的不同电化学特征的研究结果为进一步的硅阳极研究提供了见解。