Giordano M C, Baumgaertl K, Escobar Steinvall S, Gay J, Vuichard M, Fontcuberta I Morral A, Grundler D
Laboratory of Semiconductor Materials, Institute of Materials, School of Engineering, École Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland.
Institute of Physics, School of Basic Sciences, École Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland.
ACS Appl Mater Interfaces. 2020 Sep 9;12(36):40443-40452. doi: 10.1021/acsami.0c06879. Epub 2020 Aug 26.
We report plasma-enhanced atomic layer deposition (ALD) to prepare conformal nickel thin films and nanotubes using nickelocene as a precursor, water as the oxidant agent, and an in-cycle plasma-enhanced reduction step with hydrogen. The optimized ALD pulse sequence, combined with a post-processing annealing treatment, allowed us to prepare 30 nm-thick metallic Ni layers with a resistivity of 8 μΩ cm at room temperature and good conformality both on the planar substrates and nanotemplates. Thus, we fabricated several micrometers-long nickel nanotubes with diameters ranging from 120 to 330 nm. We report the correlation between ALD growth and functional properties of individual Ni nanotubes characterized in terms of magnetotransport and the confinement of spin-wave modes. The findings offer novel perspectives for Ni-based spintronics and magnonic devices operated in the GHz frequency regime with 3D device architectures.
我们报道了利用等离子体增强原子层沉积（ALD）技术，以二茂镍作为前驱体、水作为氧化剂，并通过氢气进行循环内等离子体增强还原步骤，来制备保形镍薄膜和纳米管。优化后的ALD脉冲序列，结合后处理退火处理，使我们能够在室温下制备出厚度为30 nm、电阻率为8 μΩ cm的金属镍层，且该镍层在平面衬底和纳米模板上均具有良好的保形性。因此，我们制备出了直径在120至330 nm之间、长度为几微米的镍纳米管。我们报道了以磁输运和自旋波模式限制来表征的ALD生长与单个镍纳米管功能特性之间的相关性。这些发现为基于镍的自旋电子学和在GHz频率范围运行的具有3D器件架构的磁子器件提供了新的视角。
