Salah Mohammed, Hall Colin, Alvarez de Eulate Eva, Murphy Peter, Francis Candice, Kerr Robert, Pathirana Thushan, Fabretto Manrico
Future Industries Institute, University of South Australia, STEM, Adelaide, South Australia 5000, Australia.
Department of Physics, Faculty of Science, Minia University, El-Minia 61519, Egypt.
ACS Appl Mater Interfaces. 2020 Sep 2;12(35):39195-39204. doi: 10.1021/acsami.0c10609. Epub 2020 Aug 19.
Silicon has been considered a good candidate for replacing the commonly used carbon anodes for lithium-ion batteries (LIBs) due to its high specific capacity, which can be up to 11 times higher than that of carbon. However, the desirable advantage that silicon brings to battery performance is currently overshadowed by its stress-induced performance loss and high electronic resistivity. The induced stress arises from two sources, namely, the deposition process (i.e., residual stress) during fabrication and the volume expansion (i.e., mechanical stress) associated with the lithiation/delithiation process. Of the two, residual stress has largely been ignored, underestimated, or considered to have a negligible effect without any rigorous evidence being put forward. In this contribution, we produced silicon thin films having a wide range of residual stress and resistivity using a physical vapor deposition technique, magnetron sputtering. Three pairs of silicon thin-film anodes were utilized to study the effect of residual stress on the electrochemical and cyclability performance as anodes for LIBs. Each set consisted of a pair of films having essentially the same resistivity, density, thickness, and oxidation amount but distinctly different residual stresses. The comparison was evaluated by conducting charge/discharge cycling and cyclic voltammetry (CV) experiments. In contrast to the fixed belief within the literature, higher compressive residual-stress films showed better electrochemical and cycle performance compared to lower residual-stress films. The results, herein, present an informed understanding of the role that residual stress plays, which will help researchers improve the development of silicon-based thin-film anodes.
由于硅具有高比容量,其比容量可达碳的11倍,因此它被认为是替代锂离子电池(LIBs)常用碳阳极的理想材料。然而,目前硅给电池性能带来的理想优势被其应力诱导的性能损失和高电子电阻率所掩盖。诱导应力来自两个来源,即在制造过程中的沉积过程(即残余应力)和与锂化/脱锂过程相关的体积膨胀(即机械应力)。在这两者中,残余应力在很大程度上被忽视、低估或被认为影响可忽略不计,且没有提出任何严格的证据。在本论文中,我们使用物理气相沉积技术磁控溅射制备了具有广泛残余应力和电阻率的硅薄膜。利用三对硅薄膜阳极来研究残余应力对作为LIBs阳极的电化学性能和循环性能的影响。每组由一对具有基本相同的电阻率、密度、厚度和氧化量但残余应力明显不同的薄膜组成。通过进行充放电循环和循环伏安法(CV)实验来评估比较结果。与文献中的固有观点相反,与较低残余应力的薄膜相比,较高压缩残余应力的薄膜表现出更好的电化学性能和循环性能。本文的结果提供了对残余应力所起作用的深入理解,这将有助于研究人员改进基于硅的薄膜阳极的开发。