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多层与单层十二烷硫醇对区域选择性原子层沉积中选择性和图案完整性的影响。

Effect of Multilayer versus Monolayer Dodecanethiol on Selectivity and Pattern Integrity in Area-Selective Atomic Layer Deposition.

作者信息

Liu Tzu-Ling, Nardi Katie L, Draeger Nerissa, Hausmann Dennis M, Bent Stacey F

机构信息

Lam Research Corporation, Fremont, California 94538, United States.

出版信息

ACS Appl Mater Interfaces. 2020 Sep 16;12(37):42226-42235. doi: 10.1021/acsami.0c08873. Epub 2020 Aug 31.

DOI:10.1021/acsami.0c08873
PMID:32805867
Abstract

Monolayer and multilayer dodecanethiols (DDT) can be assembled onto a copper surface from the vapor phase depending on the initial oxidation state of the copper. The ability of the copper-bound dodecanethiolates to block atomic layer deposition (ALD) and the resulting behavior at the interfaces of Cu/SiO patterns during area-selective ALD (AS-ALD) are compared between mono- and multilayers. We show that multilayer DDT is ∼7 times more effective at blocking ZnO ALD from diethylzinc and water than is monolayer DDT. Conversely, monolayer DDT exhibits better performance than does multilayer DDT in blocking of AlO ALD from trimethylaluminum and water. Investigation into interfacial effects at the interface between Cu and SiO on Cu/SiO patterns reveals both a gap at the SiO edges and a pitch size-dependent nucleation delay of ZnO ALD on SiO regions of multilayer DDT-coated patterns. In contrast, no impact on ZnO ALD is observed on the SiO regions of monolayer DDT-coated patterns. We also show that these interfacial effects depend on the ALD chemistry. Whereas an AlO film grows on the TaN diffusion barrier of a DDT-treated Cu/SiO pattern, the ZnO film does not. These results indicate that the structure of the DDT layer and the ALD precursor chemistry both play an important role in achieving AS-ALD.

摘要

根据铜的初始氧化状态,单层和多层十二烷硫醇(DDT)可从气相组装到铜表面。比较了单层和多层铜结合的十二烷硫醇盐在区域选择性原子层沉积(AS-ALD)过程中阻止原子层沉积(ALD)的能力以及在Cu/SiO图案界面处的行为。我们表明,多层DDT在阻止二乙基锌和水进行ZnO ALD方面比单层DDT有效约7倍。相反,在阻止三甲基铝和水进行AlO ALD方面,单层DDT比多层DDT表现出更好的性能。对Cu/SiO图案上Cu和SiO之间界面的界面效应研究表明,在SiO边缘存在间隙,并且在多层DDT涂层图案的SiO区域上,ZnO ALD的成核延迟与间距尺寸有关。相比之下,在单层DDT涂层图案的SiO区域上未观察到对ZnO ALD的影响。我们还表明,这些界面效应取决于ALD化学。虽然在DDT处理的Cu/SiO图案的TaN扩散阻挡层上生长AlO膜,但ZnO膜不生长。这些结果表明,DDT层的结构和ALD前驱体化学在实现AS-ALD中都起着重要作用。

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