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硫化锗中的层间束缚万尼尔激子。

Interlayer Bound Wannier Excitons in Germanium Sulfide.

作者信息

Postorino Sara, Sun Jianbo, Fiedler Saskia, Lee Cheong Lem Laurent O, Palummo Maurizia, Camilli Luca

机构信息

Dipartimento di Fisica, Università degli studi di Roma "Tor Vergata", via della Ricerca Scientifica 1, 00133 Roma, Italy.

Department of Physics, Technical University of Denmark, Ørsteds Plads, 2800 Kgs. Lyngby, Denmark.

出版信息

Materials (Basel). 2020 Aug 12;13(16):3568. doi: 10.3390/ma13163568.

Abstract

We report a cathodoluminescence (CL) study of layered germanium sulfide (GeS) where we observe a sharp emission peak from flakes covered with a thin hexagonal boron nitride film. GeS is a material that has recently attracted considerable interest due to its emission in the visible region and its strong anisotropy. The measured CL peak is at ~1.69 eV for samples ranging in thickness from 97 nm to 45 nm, where quantum-confinement effects can be excluded. By performing ground- and excited-state simulations for the bulk compound, we show that the measured optical peak can be unambiguously explained by radiative recombination of the first free bright bound exciton, which is due to a mixing of direct transitions near the Γ-point of the Brillouin Zone and it is associated to a very large optical anisotropy. The analysis of the corresponding excitonic wave function shows a Wannier-Mott interlayer character, being spread not only in-plane but also out-of-plane.

摘要

我们报道了对层状硫化锗(GeS)的阴极发光(CL)研究,在此研究中我们观察到覆盖有薄六方氮化硼薄膜的薄片出现了一个尖锐的发射峰。GeS是一种近来因其在可见光区域的发射以及强烈的各向异性而备受关注的材料。对于厚度在97纳米至45纳米范围内的样品,测量得到的CL峰位于约1.69电子伏特处,在此可以排除量子限制效应。通过对体相化合物进行基态和激发态模拟,我们表明所测量的光学峰可以明确地由第一个自由明亮束缚激子的辐射复合来解释,这是由于布里渊区Γ点附近的直接跃迁混合所致,并且它与非常大的光学各向异性相关。对相应激子波函数的分析显示出一种万尼尔 - 莫特层间特性,不仅在平面内而且在平面外都有扩展。

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