Chang Kai, Küster Felix, Miller Brandon J, Ji Jing-Rong, Zhang Jia-Lu, Sessi Paolo, Barraza-Lopez Salvador, Parkin Stuart S P
Max Planck Institute of Microstructure Physics, Weinberg 2, Halle 06120, Germany.
Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, United States.
Nano Lett. 2020 Sep 9;20(9):6590-6597. doi: 10.1021/acs.nanolett.0c02357. Epub 2020 Aug 24.
Two-dimensional (2D) van der Waals ferroelectrics provide an unprecedented architectural freedom for the creation of artificial multiferroics and nonvolatile electronic devices based on vertical and coplanar heterojunctions of 2D ferroic materials. Nevertheless, controlled microscopic manipulation of ferroelectric domains is still rare in monolayer-thick 2D ferroelectrics with in-plane polarization. Here we report the discovery of robust ferroelectricity with a critical temperature close to 400 K in SnSe monolayer plates grown on graphene and the demonstration of controlled room-temperature ferroelectric domain manipulation by applying appropriate bias voltage pulses to the tip of a scanning tunneling microscope (STM). This study shows that STM is a powerful tool for detecting and manipulating the microscopic domain structures in 2D ferroelectric monolayers, which are difficult for conventional approaches such as piezoresponse force microscopy, thus facilitating the hunt for other 2D ferroelectric monolayers with in-plane polarization with important technological applications.
二维(2D)范德华铁电体为基于二维铁电材料的垂直和平行异质结创建人工多铁性材料和非易失性电子器件提供了前所未有的结构自由度。然而,在具有面内极化的单层厚二维铁电体中,对铁电畴进行可控的微观操纵仍然很少见。在此,我们报告了在生长于石墨烯上的单层SnSe板中发现了临界温度接近400 K的强铁电性,并展示了通过向扫描隧道显微镜(STM)尖端施加适当的偏置电压脉冲,在室温下对铁电畴进行可控操纵。这项研究表明,STM是检测和操纵二维铁电单分子层中微观畴结构的有力工具,而传统方法如压电响应力显微镜对这些结构难以检测,从而有助于寻找其他具有面内极化且具有重要技术应用的二维铁电单分子层。