• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

由低表面缺陷范德华和自组装材料组成的高稳定人工突触。

Highly Stable Artificial Synapse Consisting of Low-Surface Defect van der Waals and Self-Assembled Materials.

机构信息

Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, South Korea.

Electrical and Computer Engineering Department, University of California San Diego, San Diego, California 92093, United States.

出版信息

ACS Appl Mater Interfaces. 2020 Aug 26;12(34):38299-38305. doi: 10.1021/acsami.0c07394. Epub 2020 Aug 12.

DOI:10.1021/acsami.0c07394
PMID:32846476
Abstract

The long-term plasticity of biological synapses was successfully emulated in an artificial synapse fabricated by combining low-surface defect van der Waals (vdW) and self-assembled (SA) materials. The synaptic operation could be achieved by facilitating hole trapping and releasing only via the amine (NH) functional groups in 3-aminopropyltriethoxysilane, which consequently induced a gradual conductance change in the WSe channel. The vdW-SA synaptic device exhibited extremely stable long-term potentiation/depression (LTP/LTD) characteristics; its dynamic range and nonlinearity reproduced near 100 and 3.13/-6.53 (for LTP/LTD) with relative standard deviations (RSDs) below 2%. Furthermore, after conducting training and recognition tasks for the Modified National Institute of Standard and Technology (MNIST) digit patterns, we verified that the maximum recognition rate was 78.3%, and especially, its RSD was as low as 0.32% over several training/recognition cycles. This study provides a background for future research on advanced artificial synapses based on vdW and organic materials.

摘要

通过结合低表面缺陷范德华(vdW)和自组装(SA)材料,成功模拟了生物突触的长期可塑性。通过在 3-氨丙基三乙氧基硅烷中的胺(NH)官能团仅促进空穴捕获和释放,就可以实现突触操作,这导致 WSe 通道的电导逐渐变化。vdW-SA 突触器件表现出极其稳定的长时程增强/抑制(LTP/LTD)特性;其动态范围和非线性度分别接近 100 和 3.13/-6.53(用于 LTP/LTD),相对标准偏差(RSD)低于 2%。此外,在对修改后的国家标准与技术研究所(MNIST)数字模式进行训练和识别任务后,我们验证了最高识别率为 78.3%,特别是在几个训练/识别循环中,其 RSD 低至 0.32%。这项研究为基于 vdW 和有机材料的先进人工突触的未来研究提供了背景。

相似文献

1
Highly Stable Artificial Synapse Consisting of Low-Surface Defect van der Waals and Self-Assembled Materials.由低表面缺陷范德华和自组装材料组成的高稳定人工突触。
ACS Appl Mater Interfaces. 2020 Aug 26;12(34):38299-38305. doi: 10.1021/acsami.0c07394. Epub 2020 Aug 12.
2
Integrated In-Memory Sensor and Computing of Artificial Vision Based on Full-vdW Optoelectronic Ferroelectric Field-Effect Transistor.基于全范德瓦尔斯光电铁电场效应晶体管的集成内存传感器与人工视觉计算
Adv Sci (Weinh). 2024 Jan;11(3):e2305679. doi: 10.1002/advs.202305679. Epub 2023 Nov 29.
3
Inhibitory artificial synapses based on photoelectric co-modulation of graphene/WSevan der Waals heterojunctions.基于石墨烯/WSevan der Waals 异质结的光电协同调制的抑制型人工突触。
Nanotechnology. 2023 Oct 4;34(50). doi: 10.1088/1361-6528/acf82d.
4
Rational Band Engineering of an Organic Double Heterojunction for Artificial Synaptic Devices with Enhanced State Retention and Linear Update of Synaptic Weight.理性能带工程在人工突触器件中的应用:增强状态保持和突触权重线性更新的有机双异质结。
ACS Appl Mater Interfaces. 2020 Mar 4;12(9):10737-10745. doi: 10.1021/acsami.9b22319. Epub 2020 Feb 20.
5
A Bioinspired Ultra Flexible Artificial van der Waals 2D-MoS Channel/LiSiO Solid Electrolyte Synapse Arrays via Laser-Lift Off Process for Wearable Adaptive Neuromorphic Computing.通过激光剥离工艺制备的仿生超灵活人工范德华 2D-MoS 通道/LiSiO 固态电解质突触阵列,用于可穿戴自适应神经形态计算。
Small Methods. 2023 Jul;7(7):e2201719. doi: 10.1002/smtd.202201719. Epub 2023 Mar 24.
6
Artificial Synapse Based on van der Waals Heterostructures with Tunable Synaptic Functions for Neuromorphic Computing.基于具有可调突触功能的范德华异质结构用于神经形态计算的人工突触
ACS Appl Mater Interfaces. 2020 Mar 11;12(10):11945-11954. doi: 10.1021/acsami.9b21747. Epub 2020 Feb 26.
7
Electrolyte-Gated Vertical Synapse Array based on Van Der Waals Heterostructure for Parallel Computing.基于范德华异质结构的电解质门控垂直突触阵列用于并行计算。
Adv Sci (Weinh). 2022 Feb;9(6):e2103808. doi: 10.1002/advs.202103808. Epub 2021 Dec 26.
8
An Optogenetics-Inspired Flexible van der Waals Optoelectronic Synapse and its Application to a Convolutional Neural Network.基于光遗传学的柔性范德华光电突触及其在卷积神经网络中的应用。
Adv Mater. 2021 Oct;33(40):e2102980. doi: 10.1002/adma.202102980. Epub 2021 Aug 22.
9
Photoferroelectric All-van-der-Waals Heterostructure for Multimode Neuromorphic Ferroelectric Transistors.光铁电全范德华异质结构用于多模式神经形态铁电场效应晶体管。
ACS Appl Mater Interfaces. 2023 Mar 29;15(12):15732-15744. doi: 10.1021/acsami.3c00092. Epub 2023 Mar 15.
10
Reproducible Ultrathin Ferroelectric Domain Switching for High-Performance Neuromorphic Computing.可重现的超薄铁电畴开关用于高性能神经形态计算。
Adv Mater. 2020 Feb;32(7):e1905764. doi: 10.1002/adma.201905764. Epub 2019 Dec 18.

引用本文的文献

1
Recent Advancements and Perspectives of Low-Dimensional Halide Perovskites for Visual Perception and Optoelectronic Applications.用于视觉感知和光电子应用的低维卤化物钙钛矿的最新进展与展望
Nanomicro Lett. 2025 Aug 26;18(1):44. doi: 10.1007/s40820-025-01823-z.
2
Recent Advance in Synaptic Plasticity Modulation Techniques for Neuromorphic Applications.用于神经形态应用的突触可塑性调制技术的最新进展。
Nanomicro Lett. 2024 Jun 6;16(1):211. doi: 10.1007/s40820-024-01445-x.
3
Nanowire-Enhanced Fully Transparent and Flexible Indium Gallium Zinc Oxide Transistors with Chitosan Hydrogel Gate Dielectric: A Pathway to Improved Synaptic Properties.
具有壳聚糖水凝胶栅极电介质的纳米线增强型全透明柔性铟镓锌氧化物晶体管:通往改善突触特性的途径。
Gels. 2023 Nov 27;9(12):931. doi: 10.3390/gels9120931.
4
Electrolyte-Gated Vertical Synapse Array based on Van Der Waals Heterostructure for Parallel Computing.基于范德华异质结构的电解质门控垂直突触阵列用于并行计算。
Adv Sci (Weinh). 2022 Feb;9(6):e2103808. doi: 10.1002/advs.202103808. Epub 2021 Dec 26.
5
Flexible artificial Si-In-Zn-O/ion gel synapse and its application to sensory-neuromorphic system for sign language translation.柔性人工硅铟锌氧化物/离子凝胶突触及其在用于手语翻译的传感神经形态系统中的应用。
Sci Adv. 2021 Oct 29;7(44):eabg9450. doi: 10.1126/sciadv.abg9450.