Zheng Yulin, Tang Xin, Yang Yuhui, Wang Wenliang, Li Guoqiang
Opt Lett. 2020 Sep 1;45(17):4843-4846. doi: 10.1364/OL.402454.
Self-powered photodetectors have demonstrated potential for developing future wireless and implantable devices. Herein, we present a self-powered UV photodetector with an ultrahigh photoresponse based on vertically oriented and high crystalline quality -type GaN nanorod arrays: poly(methyl methacrylate)/p-Si heterojunction. Benefiting from the highly efficient separation and transport of photoexcited electron-hole pairs, significant improvements in photoresponsivity are experimentally obtained. In a zero-biased self-powered detection mode, a 6.7 responsivity and 2.68×10 Jones detectivity are achieved under 355 nm light illumination, and the response time is as low as 0.29/3.07 ms (rise/fall times).
自供电光电探测器已展现出在未来无线和可植入设备开发方面的潜力。在此，我们展示了一种基于垂直取向且具有高晶体质量的n型GaN纳米棒阵列：聚甲基丙烯酸甲酯/p-Si异质结的具有超高光响应的自供电紫外光电探测器。受益于光激发电子-空穴对的高效分离和传输，通过实验实现了光响应度的显著提高。在零偏置自供电检测模式下，在355 nm光照下实现了6.7的响应度和2.68×10的琼斯探测率，且响应时间低至0.29/3.07 ms（上升/下降时间）。
