Ma Yongjian, Chen Tiwei, Zhang Xiaodong, Tang Wenbo, Feng Boyuan, Hu Yu, Zhang Li, Zhou Xin, Wei Xing, Xu Kun, Mudiyanselage Dinusha, Fu Houqiang, Zhang Baoshun
School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, 230026 Hefei, China.
Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China.
ACS Appl Mater Interfaces. 2022 Aug 3;14(30):35194-35204. doi: 10.1021/acsami.2c06927. Epub 2022 Jul 25.
In this paper, self-powered ultraviolet (UV) photodetectors with high response performance based on GaO/p-GaN were fabricated by metal-organic chemical vapor deposition (MOCVD). The effects of different crystal phases of GaO (including , ε, ε/β, and β) grown on p-GaN films on the performance of photodetectors were systematically studied. Moreover, an GaON dielectric layer improved the responsivity of GaO/p-GaN photodetectors by 20 times. All GaO/p-GaN photodetectors showed self-power capability without bias. An ultralow dark current of 3.08 pA and a / ratio of 4.1 × 10 (1.8 × 10) under 254 nm (365 nm) light were obtained for the β-GaO/p-GaN photodetector at 0 V bias. Furthermore, the β-GaO/p-GaN photodetector showed excellent sensitivity with a high responsivity of 3.8 A/W (0.83 A/W), a fast response speed of 66/36 ms (36/73 ms), and a high detectivity of 1.12 × 10 Jones (2.44 × 10 Jones) under 254 nm (365 nm) light at 0 V bias. The carrier transport mechanism of the GaO/p-GaN self-powered photodetector was also analyzed through the device energy band diagram. This work provides critical information for the design and fabrication of high-performance self-powered GaO/p-GaN UV photodetectors, opening the door to a variety of photonic systems and applications without an external power supply.
在本文中，通过金属有机化学气相沉积（MOCVD）制备了基于GaO/p-GaN的具有高响应性能的自供电紫外（UV）光电探测器。系统研究了在p-GaN薄膜上生长的不同晶相的GaO（包括 、ε、ε/β和β）对光电探测器性能的影响。此外，一个GaON介电层使GaO/p-GaN光电探测器的响应度提高了20倍。所有GaO/p-GaN光电探测器均显示出无偏置的自供电能力。在0 V偏压下，β-GaO/p-GaN光电探测器在254 nm（365 nm）光照下获得了3.08 pA的超低暗电流和4.1×10（1.8×10）的/比。此外，β-GaO/p-GaN光电探测器在0 V偏压下，在254 nm（365 nm）光照下表现出优异的灵敏度，具有3.8 A/W（0.83 A/W）的高响应度、66/36 ms（36/73 ms）的快速响应速度和1.12×10琼斯（2.44×10琼斯）的高探测率。还通过器件能带图分析了GaO/p-GaN自供电光电探测器的载流子传输机制。这项工作为高性能自供电GaO/p-GaN紫外光电探测器的设计和制造提供了关键信息，为无需外部电源的各种光子系统和应用打开了大门。
