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硫化钴表面能及电子性质的计算

Calculation on surface energy and electronic properties of CoS.

作者信息

Zhu Yan-Li, Wang Cong-Jie, Gao Fei, Xiao Zhi-Xia, Zhao Peng-Long, Wang Jian-Yong

机构信息

State Key Laboratory of Explosion Science and Technology, Beijing Institute of Technology, Beijing 100081, People's Republic of China.

Battery Energy Storage Technology Laboratory, China Electric Power Research Institute, Beijing 100192, People's Republic of China.

出版信息

R Soc Open Sci. 2020 Jul 1;7(7):191653. doi: 10.1098/rsos.191653. eCollection 2020 Jul.

Abstract

Density functional theory was employed to investigate the (111), (200), (210), (211) and (220) surfaces of CoS. The surface energies were calculated with a sulfur environment using first-principle-based thermodynamics. It is founded that surfaces with metal atoms at their outermost layer have higher energy. The stoichiometric (220) surface terminated by two layer of sulfur atoms is most stable under the sulfur-rich condition, while the non-stoichiometric (211) surface terminated by a layer of Co atoms has the lower energy under the sulfur-poor environment. The electric structure results show that the front valence electrons of (200) surface are active, indicating that there may be some active sites on this face. There is an energy gap between the stoichiometric (220) and (211), which has low Fermi energy, indicating that their electronic structures are dynamically stable. Spin-polarized bands are calculated on the stoichiometric surfaces, and these two (200) and (210) surfaces are predicted to be noticeably spin-polarized. The Bravais-Friedel-Donnay-Harker (BFDH) method is adopted to predict crystal growth habit. The results show that the most important crystal planes for the CoS crystal growth are (111) and (200) planes, and the macroscopic morphology of CoS crystal may be spherical, cubic, octahedral, prismatic or plate-shaped, which have been verified by experiments.

摘要

采用密度泛函理论研究了CoS的(111)、(200)、(210)、(211)和(220)表面。利用基于第一性原理的热力学方法计算了在硫环境下的表面能。结果发现,最外层为金属原子的表面具有较高的能量。在富硫条件下,由两层硫原子终止的化学计量比(220)表面最稳定,而在贫硫环境下,由一层Co原子终止的非化学计量比(211)表面能量较低。电子结构结果表明,(200)表面的前沿价电子具有活性,表明该表面可能存在一些活性位点。化学计量比的(220)和(211)之间存在能隙,费米能较低,表明它们的电子结构动态稳定。在化学计量比表面上计算了自旋极化能带,预测(200)和(210)这两个表面有明显的自旋极化。采用布拉维-弗里德尔-多纳伊-哈克(BFDH)方法预测晶体生长习性。结果表明,CoS晶体生长最重要的晶面是(111)和(200)面,CoS晶体的宏观形貌可能为球形、立方体形、八面体形、棱柱形或板状,这些已通过实验得到验证。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5c4b/7428281/138780ce00b9/rsos191653-g1.jpg

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