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卤代二苯并[,]苝的合成、表征及电荷传输性质

Synthesis, Characterization, and Charge-Transport Properties of Halogenated Dibenzo[,]perylenes.

作者信息

Liu Lele, Hu Hui, Guo Mingming, Zhang Lei

机构信息

Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology, Beijing 100029, P. R. China.

SINOPEC Beijing Research Institute of Chemical Industry, Beijing 100013, P. R. China.

出版信息

J Org Chem. 2020 Oct 2;85(19):12243-12251. doi: 10.1021/acs.joc.0c01445. Epub 2020 Sep 16.

Abstract

In designing organic semiconductors for organic devices, halogenation is a very popular strategy for tuning the electronic properties and packing arrangement in the solid state. Herein, we report the synthesis and characterization of halogenated dibenzo[,]perylene (DBP) with triethylsilyl (TES)-ethynyl substituents at the 8- and 16-positions (TES-DBP). The resulting compounds are characterized by optical, electrochemical, crystallographic, and computational studies to clarify the effect of halogenation on the optoelectronic properties and charge-carrier transport. It is found that the halogen atoms, the degree of halogenation, and their positional locations can alter the electronic properties and crystal packing of the compounds. In contrast to fluorinated TES-DBP, the chlorinated counterpart has red-shifted maximum absorption and lower electron affinity owing to the electron delocalization between DBP core and the unoccupied 3d orbitals of Cl atom. Organic field-effect transistor measurements demonstrate that TES-2ClDBP shows a hole mobility of 0.25 cm V s, which is higher than TES-2FDBP and TES-DBP. On the other hand, TES-4ClDBP exhibits ambipolar transport characteristics with electron and hole mobilities up to 0.02 and 0.07 cm V s, respectively.

摘要

在设计用于有机器件的有机半导体时,卤化是一种非常流行的策略,用于调节固态下的电子性质和堆积排列。在此,我们报告了在8位和16位带有三乙基硅烷基(TES)-乙炔基取代基的卤化二苯并[,]苝(DBP)(TES-DBP)的合成与表征。通过光学、电化学、晶体学和计算研究对所得化合物进行表征,以阐明卤化对光电性质和电荷载流子传输的影响。结果发现,卤原子、卤化程度及其位置可以改变化合物的电子性质和晶体堆积。与氟化TES-DBP相比,氯化的对应物由于DBP核与Cl原子未占据的3d轨道之间的电子离域作用,其最大吸收发生红移且电子亲和力较低。有机场效应晶体管测量表明,TES-2ClDBP的空穴迁移率为0.25 cm² V⁻¹ s⁻¹,高于TES-2FDBP和TES-DBP。另一方面,TES-4ClDBP表现出双极性传输特性,电子和空穴迁移率分别高达0.02和0.07 cm² V⁻¹ s⁻¹。

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