Department of Chemistry, Savitribai Phule Pune University (formerly University of Pune), Pune, 411007, India.
Department of Physics, Savitribai Phule Pune University (formerly University of Pune), Pune, 411007, India.
Environ Sci Pollut Res Int. 2021 Jan;28(4):3928-3941. doi: 10.1007/s11356-020-10459-y. Epub 2020 Sep 7.
ZnO and ZnO:Al thin films have been successfully synthesized by simple solution processable method at low temperature. Highly crystalline (002) preferentially oriented, uniform, and smooth ZnO:Al thin films are produced. The electrical, J-V and C-V, measurements revealed higher current flow and more carrier concentration, respectively, for ZnO:Al samples compared with pristine ZnO. ZnO- and ZnO:Al-based field effect transistors (FETs) were fabricated using SiO and TiO gate dielectric layers onto flexible plastic, ITO and rigid, p-Si substrates. The ZnO:Al-based FETs measured better transistor performance with both SiO and TiO gate dielectrics as compared with ZnO-based TFTs. The saturated field effect mobilities 5.78 and 4.96 cm/Vs were measured for ZnO:Al-based TFTs with SiO and TiO dielectrics, which reasonably higher than 0.51 and 0.43 cm/Vs, respectively, measured for pristine ZnO TFTs. The effect of smooth surface and reduced grain boundaries of ZnO:Al layer contributed to measure the low-interface trap density and trap density at grain boundaries. The reported procedure can be applicable to produce large area transparent electronics onto flexible plastic substrates.
铝薄膜已经通过简单的溶液处理方法在低温下成功合成。得到了高度结晶的（002）择优取向、均匀和光滑的氧化锌：铝薄膜。电、J-V 和 C-V 测量结果表明，与原始氧化锌相比，氧化锌：铝样品的电流流动更大，载流子浓度更高。使用 SiO 和 TiO 栅介质层在柔性塑料、ITO 和刚性 p-Si 衬底上制造了基于氧化锌和氧化锌：铝的场效应晶体管（FET）。与基于氧化锌的 TFT 相比，基于 ZnO：Al 的 FET 具有更好的晶体管性能，SiO 和 TiO 栅介质都具有更好的性能。对于具有 SiO 和 TiO 电介质的 ZnO：Al 基 TFT，测量到的饱和场效应迁移率分别为 5.78 和 4.96 cm/Vs，这比分别测量到的原始 ZnO TFT 的 0.51 和 0.43 cm/Vs 要高得多。氧化锌：铝层的表面光滑和晶界减少的效果有助于测量低界面陷阱密度和晶界处的陷阱密度。所报道的方法可以适用于在柔性塑料衬底上制造大面积透明电子器件。
