Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China.
Department of Chemical Engineering, Northeastern University, Boston, MA, USA.
Int J Nanomedicine. 2020 Aug 20;15:6239-6245. doi: 10.2147/IJN.S223651. eCollection 2020.
As a key component in artificial intelligence computing, a transistor design is updated here as a potential alternative candidate for artificial synaptic behavior implementation. However, further updates are needed to better control artificial synaptic behavior. Here, an updated channel-electrode transistor design is proposed as an artificial synapse device; this structure is different from previously published designs by other groups.
A semiconductor characterization system was used in order to simulate the artificial synaptic behavior and a scanning electron microscope was used to characterize the device structure.
It was found that the electrode added to the transistor channel had a strong impact on the representative transmission behavior of such artificial synaptic devices, such as excitatory postsynaptic current (EPSC) and the paired-pulse facilitation (PPF) index.
These behaviors were tuned effectively and the impact of the channel electrode is explained by the combined effects of the joint channel electrode and conventional gate. The voltage dependence of such oxide devices suggests more capability to emulate various synaptic behaviors for numerous medical and non-medical applications. This is extremely helpful for future neuromorphic computational system implementation.
作为人工智能计算的关键组成部分，晶体管设计在这里被更新为人工突触行为实现的潜在替代候选方案。然而，需要进一步的更新来更好地控制人工突触行为。在这里，提出了一种经过更新的沟道-电极晶体管设计，作为人工突触器件；这种结构与其他组先前发表的设计不同。
使用半导体特性系统来模拟人工突触行为，并使用扫描电子显微镜来对器件结构进行表征。
发现晶体管沟道上添加的电极对这种人工突触器件的代表性传输行为，如兴奋性突触后电流（EPSC）和成对脉冲易化（PPF）指数，有很强的影响。
这些行为被有效地调整，并且沟道电极的影响可以通过联合沟道电极和传统栅极的联合作用来解释。这种氧化物器件的电压依赖性表明，对于许多医学和非医学应用，它具有模拟各种突触行为的更多能力。这对于未来神经形态计算系统的实现非常有帮助。
