Yang Jing-Ting, Ge Chen, Du Jian-Yu, Huang He-Yi, He Meng, Wang Can, Lu Hui-Bin, Yang Guo-Zhen, Jin Kui-Juan
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
School of Physical Sciences, University of Chinese Academy of Science, Beijing, 100049, China.
Adv Mater. 2018 Jul 4:e1801548. doi: 10.1002/adma.201801548.
Considering that the human brain uses ≈10 synapses to operate, the development of effective artificial synapses is essential to build brain-inspired computing systems. In biological synapses, the voltage-gated ion channels are very important for regulating the action-potential firing. Here, an electrolyte-gated transistor using WO with a unique tunnel structure, which can emulate the ionic modulation process of biological synapses, is proposed. The transistor successfully realizes synaptic functions of both short-term and long-term plasticity. Short-term plasticity is mimicked with the help of electrolyte ion dynamics under low electrical bias, whereas the long-term plasticity is realized using proton insertion in WO under high electrical bias. This is a new working approach to control the transition from short-term memory to long-term memory using different gate voltage amplitude for artificial synapses. Other essential synaptic behaviors, such as paired pulse facilitation, the depression and potentiation of synaptic weight, as well as spike-timing-dependent plasticity are also implemented in this artificial synapse. These results provide a new recipe for designing synaptic electrolyte-gated transistors through the electrostatic and electrochemical effects.
鉴于人类大脑运行大约需要10个突触，开发有效的人工突触对于构建受大脑启发的计算系统至关重要。在生物突触中，电压门控离子通道对于调节动作电位发放非常重要。在此，提出了一种使用具有独特隧道结构的WO的电解质门控晶体管，它可以模拟生物突触的离子调制过程。该晶体管成功实现了短期和长期可塑性的突触功能。在低电偏压下借助电解质离子动力学模拟短期可塑性，而在高电偏压下利用质子插入WO实现长期可塑性。这是一种通过不同的栅极电压幅度来控制人工突触从短期记忆到长期记忆转变的新工作方法。这种人工突触还实现了其他重要的突触行为，如双脉冲易化、突触权重的抑制和增强以及尖峰时间依赖可塑性。这些结果为通过静电和电化学效应设计突触电解质门控晶体管提供了新方法。
