High-performance monolayer NaSb shrinking transistors: a DFT-NEGF study.

2D materials with direct bandgaps and high carrier mobility are considered excellent candidates for next-generation electronic and optoelectronic devices. Here, a new 2D semiconductor, NaSb, is proposed and investigated for the performance limits of FETs by ab initio quantum-transport simulations. Monolayer NaSb shows a direct bandgap of 0.89 eV and a high phonon-limited electron mobility of up to 1.25 × 10 cm V s. We evaluated the impact of channel lengths, gate underlaps, oxide thicknesses, and dielectrics on devices. The major figures of merits for FETs are also assessed in terms of the On-Off ratio, subthreshold swing, gate capacitance, delay time, power dissipation, and field-effect mobility, fulfilling the requirements of the International Roadmap for Devices and Systems (IRDS) for high-performance (HP) devices and demonstrating great potential for electronics with novel 2D NaSb.