Cao Zeng-Lin, Guo Xiao-Hui, Yao Kai-Lun, Zhu Lin
School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
Nanoscale. 2023 Nov 2;15(42):17029-17035. doi: 10.1039/d3nr04514e.
Due to the ability to reduce the gate length of field-effect transistors (FETs) down to sub-10 nm without obviously affecting the performance of the device, the utilization of two-dimensional (2D) semiconductor materials as channel materials for FETs is of great interest. However, in-plane 2D/2D heterojunction FETs have received less attention in previous studies than vertical van der Waals heterojunction devices. Based on the above reasons, this study has investigated the transport properties of an in-plane NbSe/MoSe/NbSe heterojunction FET with different gate lengths by using quantum transport simulation. The results reveal that a gate length of sub-9 nm gives the device a low subthreshold swing down to 62 mV dec and a high on-state current up to 1040 μA μm. Most importantly, the on-state current, delay time, and power dissipation of the FET with the optimized channel length can nearly meet or even exceed the high-performance and low-power requirements of the International Technology Roadmap for Semiconductors. The findings for this FET can provide the design and development guidance for other in-plane heterojunction electrical devices in the post-Moore era.
由于能够将场效应晶体管（FET）的栅极长度减小至10纳米以下而不明显影响器件性能，利用二维（2D）半导体材料作为FET的沟道材料备受关注。然而，与垂直范德华异质结器件相比，面内2D/2D异质结FET在以往研究中受到的关注较少。基于上述原因，本研究通过量子输运模拟研究了不同栅极长度的面内NbSe/MoSe/NbSe异质结FET的输运特性。结果表明，9纳米以下的栅极长度使器件具有低至62 mV/dec的亚阈值摆幅和高达1040 μA/μm的高导通电流。最重要的是，具有优化沟道长度的FET的导通电流、延迟时间和功耗几乎可以满足甚至超过国际半导体技术路线图的高性能和低功耗要求。该FET的研究结果可为后摩尔时代的其他面内异质结电子器件的设计和开发提供指导。
