Chen Tong, Leng Kangmin, Ma Zhongyuan, Jiang Xiaofan, Chen Kunji, Li Wei, Xu Jun, Xu Ling
The School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.
Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
Nanomaterials (Basel). 2022 Dec 24;13(1):85. doi: 10.3390/nano13010085.
With the big data and artificial intelligence era coming, SiN-based resistive random-access memories (RRAM) with controllable conductive nanopathways have a significant application in neuromorphic computing, which is similar to the tunable weight of biological synapses. However, an effective way to detect the components of conductive tunable nanopathways in a-SiN:H RRAM has been a challenge with the thickness down-scaling to nanoscale during resistive switching. For the first time, we report the evolution of a Si dangling bond nanopathway in a-SiN:H resistive switching memory can be traced by the transient current at different resistance states. The number of Si dangling bonds in the conducting nanopathway for all resistive switching states can be estimated through the transient current based on the tunneling front model. Our discovery of transient current induced by the Si dangling bonds in the a-SiN:H resistive switching device provides a new way to gain insight into the resistive switching mechanism of the a-SiN:H RRAM in nanoscale.
随着大数据和人工智能时代的到来，具有可控导电纳米通道的基于氮化硅的电阻式随机存取存储器（RRAM）在神经形态计算中具有重要应用，这类似于生物突触的可调权重。然而，随着电阻开关过程中厚度缩小到纳米尺度，检测非晶硅氮化氢（a-SiN:H）RRAM中导电可调纳米通道的组成成分的有效方法一直是一个挑战。我们首次报道了非晶硅氮化氢电阻式开关存储器中硅悬键纳米通道的演化可以通过不同电阻状态下的瞬态电流来追踪。基于隧穿前沿模型，通过瞬态电流可以估算出所有电阻开关状态下导电纳米通道中硅悬键的数量。我们在非晶硅氮化氢电阻式开关器件中发现由硅悬键引起的瞬态电流，为深入了解纳米尺度下非晶硅氮化氢RRAM的电阻开关机制提供了一种新方法。
