Xu Linhai, Wang Yufei, Jia Yufei, Zheng Wanhua
Opt Lett. 2020 Sep 15;45(18):5097-5100. doi: 10.1364/OL.400420.
An electrically driven dumbbell-shaped cavity semiconductor laser laterally confined by isolation and metal layers at 635 nm has been proposed. In the simulation, we systematically analyzed the -factors, mode intensity distributions, and directionality of the dumbbell-shaped cavity. A measured speckle contrast as low as 3.7%, emission divergence of 7.7°, and maximum output power of about 2.36 W were obtained in the experiment. Such a semiconductor laser with low coherence, high power, and high directivity may provide great potential application value in laser display and imaging.
已经提出了一种由隔离层和金属层横向限制的电驱动哑铃形腔半导体激光器，其波长为635nm。在模拟中，我们系统地分析了哑铃形腔的 - 因子、模式强度分布和方向性。实验中测得的散斑对比度低至3.7%，发射发散角为7.7°，最大输出功率约为2.36W。这种具有低相干性、高功率和高方向性的半导体激光器可能在激光显示和成像方面具有巨大的潜在应用价值。
