Lateral monolayer MoS homojunction devices prepared by nitrogen plasma doping.

Monolayer MoS possesses good electron mobility, structural flexibility and a direct band gap, enabling it to be a promising candidate for flexible and wearable optoelectronic devices. In this article, the lateral monolayer MoS homojunctions were prepared by a nitrogen plasma selective doping technique. The monolayer MoS thin films were synthesized by chemical vapor deposition and characterized by photoluminescence, atom force microscope and Raman spectroscopy. The electronic and photoelectric properties of the lateral pn and npn homojunctions were discussed. The results showed that the rectifying ratio of the pn homojunction diode is ∼10. As a photodetector of pn homojunction, the optical responsivity is up to 48.5 A W, the external quantum efficiency is 11 301%, the detectivity is ∼10 Jones and the response time is 20 ms with the laser of 532 nm and the reverse bias voltage of 10 V. As a bipolar junction transistor of npn homojunction, the amplification coefficient reached ∼10. A controllable plasma doping technique, compatible with traditional CMOS process, is utilized to realize the monolayer MoS based pn and npn homojunctions, and it propels the potential applications of 2D materials in the electronic, optoelectronic devices and circuits.