Constructing phase boundary in AgNbO antiferroelectrics: pathway simultaneously achieving high energy density and efficiency.

Dielectric capacitors with high energy storage density (W) and efficiency (η) are in great demand for high/pulsed power electronic systems, but the state-of-the-art lead-free dielectric materials are facing the challenge of increasing one parameter at the cost of the other. Herein, we report that high W of 6.3 J cm with η of 90% can be simultaneously achieved by constructing a room temperature M2-M3 phase boundary in (1-x)AgNbO-xAgTaO solid solution system. The designed material exhibits high energy storage stability over a wide temperature range of 20-150 °C and excellent cycling reliability up to 10 cycles. All these merits achieved in the studied solid solution are attributed to the unique relaxor antiferroelectric features relevant to the local structure heterogeneity and antiferroelectric ordering, being confirmed by scanning transmission electron microscopy and synchrotron X-ray diffraction. This work provides a good paradigm for developing new lead-free dielectrics for high-power energy storage applications.