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高压合成块状黑磷的结构特征、各向异性热膨胀及热电性能

Structural Features, Anisotropic Thermal Expansion, and Thermoelectric Performance in Bulk Black Phosphorus Synthesized under High Pressure.

作者信息

Rodrigues João Elias F S, Gainza Javier, Serrano-Sánchez Federico, López Carlos, Dura Oscar J, Nemes Norbert, Martinez Jose L, Huttel Yves, Fauth Francois, Fernández-Diaz Maria Teresa, Biškup Nevenko, Alonso José Antonio

机构信息

Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, E-28049 Madrid, Spain.

INTEQUI, (UNSL-CONICET), and Fac. de Química, Bioquímica y Farmacia, UNSL, Almirante Brown 1455, 5700, San Luis (SL), Argentina.

出版信息

Inorg Chem. 2020 Oct 19;59(20):14932-14943. doi: 10.1021/acs.inorgchem.0c01573. Epub 2020 Oct 2.

DOI:10.1021/acs.inorgchem.0c01573
PMID:33006896
Abstract

Black phosphorus (BP) allotrope has an orthorhombic crystal structure with a narrow bandgap of 0.35 eV. This material is promising for 2D technology since it can be exfoliated down to one single layer: the well-known phosphorene. In this work, bulk BP was synthesized under high-pressure conditions at high temperatures. A detailed structural investigation using neutron and synchrotron X-ray diffraction revealed the occurrence of anisotropic strain effects on the BP lattice; the combination of both sets of diffraction data allowed visualization of the lone electron pair 3s. Temperature-dependent neutron diffraction data collected at low temperature showed that the axis (zigzag) exhibits a -temperature-independent thermal expansion in the temperature interval from 20 up to 150 K. These results may be a key to address the anomalous behavior in electrical resistivity near 150 K. Thermoelectric properties were also provided; low thermal conductivity from 14 down to 6 WmK in the range 323-673 K was recorded in our polycrystalline BP, which is below the reported values for single-crystals in literature.

摘要

黑磷(BP)同素异形体具有正交晶体结构,带隙狭窄,为0.35电子伏特。这种材料在二维技术方面很有前景,因为它可以被剥离成单层:即著名的磷烯。在这项工作中,块状BP是在高温高压条件下合成的。使用中子和同步加速器X射线衍射进行的详细结构研究揭示了BP晶格上各向异性应变效应的存在;两组衍射数据的结合使得孤电子对3s得以可视化。在低温下收集的与温度相关的中子衍射数据表明,在20至150 K的温度区间内,a轴(锯齿形)呈现出与温度无关的热膨胀。这些结果可能是解决150 K附近电阻率异常行为的关键。还提供了热电性能;在我们的多晶BP中,在323 - 673 K范围内记录到了从14到6 WmK的低热导率,这低于文献中报道的单晶的值。

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