Ghader Doried
College of Engineering and Technology, American University of the Middle East, Eqaila, Kuwait.
Sci Rep. 2020 Oct 7;10(1):16733. doi: 10.1038/s41598-020-74047-3.
Valleytronics is a pioneering technological field relying on the valley degree of freedom to achieve novel electronic functionalities. Topological valley-polarized electrons confined to domain walls in bilayer graphene were extensively studied in view of their potentials in valleytronics. Here, we study the magnonic version of domain wall excitations in 2D honeycomb ferromagnetic bilayers (FBL) with collinear order. In particular, we explore the implications of Dzyaloshinskii-Moriya interaction (DMI) and electrostatic doping (ED) on the existence and characteristics of 1D magnons confined to layer stacking domain walls in FBL. The coexistence of DMI and ED is found to enrich the topology in FBL, yet the corresponding domain wall magnons do not carry a well-defined valley index. On the other hand, we show that layer stacking domain walls in DMI-free FBL constitute 1D channels for ballistic transport of topological valley-polarized magnons. Our theoretical results raise hope towards magnon valleytronic devices based on atomically thin topological magnetic materials.
谷电子学是一个开创性的技术领域,它依赖于谷自由度来实现新颖的电子功能。鉴于双层石墨烯中局限于畴壁的拓扑谷极化电子在谷电子学中的潜力,人们对其进行了广泛研究。在此,我们研究具有共线序的二维蜂窝状铁磁双层(FBL)中畴壁激发的磁振子版本。特别地,我们探讨了Dzyaloshinskii-Moriya相互作用(DMI)和静电掺杂(ED)对局限于FBL中层堆叠畴壁的一维磁振子的存在及特性的影响。研究发现,DMI和ED的共存丰富了FBL中的拓扑结构,但相应的畴壁磁振子并不携带明确的谷指数。另一方面,我们表明,无DMI的FBL中的层堆叠畴壁构成了拓扑谷极化磁振子弹道输运的一维通道。我们的理论结果为基于原子级薄拓扑磁性材料的磁振子谷电子学器件带来了希望。