Cho Jaehun, Kim Kyoung-Whan, Lee Myoung-Jae, Lee Hyeon-Jun, Kim June-Seo
Division of Nanotechnology, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea.
Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.
J Phys Condens Matter. 2021 Jan 6;33(1):015803. doi: 10.1088/1361-648X/abb64f.
Non-equilibrium domain wall dynamics on a perpendicularly magnetized nanowire manipulated by the transverse magnetic field pulse are numerically investigated. We systematically observe the large displacements of the chiral domain wall and the domain wall tilting angles generated by Dzyaloshinskii-Moriya interaction during the competition between the precession torque and the magnetic damping process. The magnetic-property-dependent domain wall displacements exhibit that the lower magnetic damping constants and Dzyaloshinskii-Moriya energy densities generate the longer transition times and the significant larger domain wall displacements for the non-equilibrium magnetization dynamics. Compare with the spin-polarized-current-driven domain wall dynamics, the transverse magnetic field pulses guarantee faster domain wall movements without Walker breakdown and lower energy consumptions because it is free from the serious Joule heating issue. Finally, we demonstrate successive chiral domain wall displacements, which are necessary to develop multilevel resistive memristors for next-generation artificial intelligent devices based on magnetic domain wall motions.
对由横向磁场脉冲操控的垂直磁化纳米线上的非平衡畴壁动力学进行了数值研究。我们系统地观察到，在手征畴壁的大位移以及在进动转矩与磁阻尼过程的竞争中由Dzyaloshinskii-Moriya相互作用产生的畴壁倾斜角。依赖于磁性的畴壁位移表明，较低的磁阻尼常数和Dzyaloshinskii-Moriya能量密度会产生更长的转变时间，并且对于非平衡磁化动力学，畴壁位移会显著更大。与自旋极化电流驱动的畴壁动力学相比，横向磁场脉冲可确保更快的畴壁移动，且不会出现Walker击穿，能耗更低，因为它不存在严重的焦耳热问题。最后，我们展示了连续的手征畴壁位移，这对于基于磁畴壁运动开发用于下一代人工智能设备的多级电阻忆阻器是必要的。
