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磁性畴壁中的手性自旋扭矩。

Chiral spin torque at magnetic domain walls.

机构信息

IBM Almaden Research Center, 650 Harry Road, San Jose, 95120 California, USA.

出版信息

Nat Nanotechnol. 2013 Jul;8(7):527-33. doi: 10.1038/nnano.2013.102. Epub 2013 Jun 16.

Abstract

Spin-polarized currents provide a powerful means of manipulating the magnetization of nanodevices, and give rise to spin transfer torques that can drive magnetic domain walls along nanowires. In ultrathin magnetic wires, domain walls are found to move in the opposite direction to that expected from bulk spin transfer torques, and also at much higher speeds. Here we show that this is due to two intertwined phenomena, both derived from spin-orbit interactions. By measuring the influence of magnetic fields on current-driven domain-wall motion in perpendicularly magnetized Co/Ni/Co trilayers, we find an internal effective magnetic field acting on each domain wall, the direction of which alternates between successive domain walls. This chiral effective field arises from a Dzyaloshinskii-Moriya interaction at the Co/Pt interfaces and, in concert with spin Hall currents, drives the domain walls in lock-step along the nanowire. Elucidating the mechanism for the manipulation of domain walls in ultrathin magnetic films will enable the development of new families of spintronic devices.

摘要

自旋极化电流为操控纳米器件的磁化提供了一种强大的手段,并产生了自旋转移力矩,可以驱动纳米线上的磁畴壁运动。在超薄磁性线中,发现畴壁的运动方向与从体自旋转移力矩预期的方向相反,而且速度也高得多。在这里,我们表明这是由于两个交织在一起的现象,都来自于自旋轨道相互作用。通过测量磁场对垂直磁化 Co/Ni/Co 三层膜中电流驱动畴壁运动的影响,我们发现每个畴壁上都作用有一个内部有效磁场,其方向在连续畴壁之间交替。这种手征有效场源于 Co/Pt 界面处的 Dzyaloshinskii-Moriya 相互作用,并与自旋霍尔电流协同作用,沿纳米线以锁定步幅驱动畴壁。阐明在超薄磁性薄膜中操控畴壁的机制将使新的一类自旋电子器件的发展成为可能。

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