Jiang Wei, Kim Boram, Chae Heeyeop
Opt Lett. 2020 Oct 15;45(20):5800-5803. doi: 10.1364/OL.405520.
In this Letter, red-emitting multi-shelled indium phosphide (InP) quantum dots (QDs) were synthesized using the safe phosphorus precursor tris(dimethylamino)phosphine (()). The long-chain ligands of oleylamine (OAm) in the () phosphide source-based InP QDs were partially exchanged with short-chain ligands of phenethylamine (PEA) in the core formation process, and the resulting InP QDs were applied to quantum dot light-emitting diodes (QLEDs). The short-chain ligands of PEA with the -conjugated benzene ring improved the charge transport and electrical conduction of the QLEDs with () phosphide source-based InP QDs. The PEA-engineering of InP QDs improved their maximum quantum yield from 71% to 85.5% with the full-width at half-maximum of 62 nm. Furthermore, the maximum external quantum efficiency of QLEDs with the PEA-engineered InP QDs improved from 1.9% to 3.5%, and their maximum power efficiency increased from 2.8 to 6.0 lm/W. This Letter demonstrates that engineering the core formation process with the short-chain ligands of PEA provides an efficient and facile way to improve the charge transport and electrical conduction in () phosphide source-based InP QLEDs for electroluminescent devices.
在本信函中，使用安全的磷前驱体三（二甲氨基）膦（）合成了发红光的多壳层磷化铟（InP）量子点（QDs）。在基于（）磷化物源的InP量子点中，油胺（OAm）的长链配体在核心形成过程中部分地被苯乙胺（PEA）的短链配体取代，并且将所得的InP量子点应用于量子点发光二极管（QLEDs）。具有共轭苯环的PEA短链配体改善了基于（）磷化物源的InP量子点的QLEDs的电荷传输和导电性能。InP量子点的PEA工程将其最大量子产率从71%提高到85.5%，半高宽为62nm。此外，具有PEA工程化InP量子点的QLEDs的最大外量子效率从1.9%提高到3.5%，其最大功率效率从2.8提高到6.0 lm/W。本信函表明，用PEA短链配体设计核心形成过程为改善基于（）磷化物源的InP QLEDs用于电致发光器件的电荷传输和导电性能提供了一种有效且简便的方法。
