Switchable Asymmetric Moiré Patterns with Strongly Localized States.

Most moiré pattern structures are constructed by twisting the angle of two similar 2D materials. The corresponding electronic structures are fixed in device applications. Here we study moiré patterns constructed with monolayers of InSe and ferroelectric InSe. The ferroelectricity of InSe induces deep electron trap states and allows the switch of moiré pattern by an applied electric field. Using a unique linear scaling computational method, we systematically studied the electronic structures, localized state sizes, and strong correlation effects of switchable moiré patterns of systems containing close to 10 000 atoms.