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ν = 5/2 量子霍尔效应中 Pfaffian 序与反 Pfaffian 序之间的拓扑界面

Topological Interface between Pfaffian and Anti-Pfaffian Order in ν=5/2 Quantum Hall Effect.

作者信息

Zhu W, Sheng D N, Yang Kun

机构信息

Institute of Natural Sciences, Westlake Institute of Advanced Study, Hangzhou, 030024, China and School of Science, Westlake University, Hangzhou, 030024, China.

Department of Physics and Astronomy, California State University, Northridge, California 91330, USA.

出版信息

Phys Rev Lett. 2020 Oct 2;125(14):146802. doi: 10.1103/PhysRevLett.125.146802.

Abstract

A recent thermal Hall experiment triggered renewed interest in the problem of ν=5/2 quantum Hall effect, which motivated novel interpretations based on the formation of mesoscopic puddles made of Pfaffian and anti-Pfaffian topological orders. Here, we study an interface between the Pfaffian and anti-Pfaffian states, which may play crucial roles in thermal transport, by means of state-of-the-art, density-matrix renormalization group simulations. We demonstrate that an intrinsic electric dipole moment emerges at the interface, similar to the "p-n" junction sandwiched between N-type and P-type semiconductor. Importantly, we elucidate the topological origin of this dipole moment, whose formation is to counterbalance the mismatch of guiding-center Hall viscosity of bulk Pfaffian and anti-Pfaffian states. In addition, these results imply that the formation of a dipole moment could be helpful to stabilize the puddles made of Pfaffian and anti-Pfaffian states in experimental conditions.

摘要

最近的一项热霍尔实验重新引发了人们对ν = 5/2量子霍尔效应问题的兴趣,这激发了基于由Pfaffian和反Pfaffian拓扑序构成的介观水坑形成的新颖解释。在此,我们通过最先进的密度矩阵重整化群模拟,研究Pfaffian态与反Pfaffian态之间的界面,该界面可能在热输运中发挥关键作用。我们证明,在该界面处出现了一个本征电偶极矩,类似于夹在N型和P型半导体之间的“p-n”结。重要的是,我们阐明了这个偶极矩的拓扑起源,其形成是为了平衡体Pfaffian态和反Pfaffian态的引导中心霍尔黏度的不匹配。此外,这些结果意味着偶极矩的形成可能有助于在实验条件下稳定由Pfaffian态和反Pfaffian态构成的水坑。

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