对《低压化学气相沉积法生长单层石墨烯的分压辅助生长：对高性能石墨烯场效应晶体管器件的启示》的修正
Correction to "Partial Pressure Assisted Growth of Single-Layer Graphene Grown by Low-Pressure Chemical Vapor Deposition: Implications for High-Performance Graphene FET Devices".
作者信息
Sharma Indu, Papanai Girija Shankar, Paul Sharon Jyotika, Gupta Bipin Kumar
出版信息
ACS Omega. 2020 Sep 30;5(40):26296. doi: 10.1021/acsomega.0c04479. eCollection 2020 Oct 13.
Abstract
[This corrects the article DOI: 10.1021/acsomega.0c02132.].
摘要
[本文更正了文章DOI：10.1021/acsomega.0c02132。]
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