Ivanov Boris I, Volkhin Dmitri I, Novikov Ilya L, Pitsun Dmitri K, Moskalev Dmitri O, Rodionov Ilya A, Il'ichev Evgeni, Vostretsov Aleksey G
Novosibirsk State Technical University, K.Marx-Av.20, Novosibirsk, 630073, Russia.
FMN Laboratory, Bauman Moscow State Technical University, 2-nd Baumanskaya str. 5, Moscow, 105005, Russia.
Beilstein J Nanotechnol. 2020 Sep 30;11:1484-1491. doi: 10.3762/bjnano.11.131. eCollection 2020.
A broadband low-noise four-stage high-electron-mobility transistor amplifier was designed and characterized in a cryogen-free dilution refrigerator at the 3.8 K temperature stage. The obtained power dissipation of the amplifier is below 20 mW. In the frequency range from 6 to 12 GHz its gain exceeds 30 dB. The equivalent noise temperature of the amplifier is below 6 K for the presented frequency range. The amplifier is applicable for any type of cryogenic microwave measurements. As an example we demonstrate here the characterization of the superconducting X-mon qubit coupled to an on-chip coplanar waveguide resonator.
设计了一种宽带低噪声四级高电子迁移率晶体管放大器，并在无液氦稀释制冷机的3.8K温度级对其进行了表征。该放大器的功耗低于20mW。在6至12GHz的频率范围内，其增益超过30dB。在所示频率范围内，该放大器的等效噪声温度低于6K。该放大器适用于任何类型的低温微波测量。作为示例，我们在此展示了与片上共面波导谐振器耦合的超导X型单量子比特的表征。
