E Siyu, Zhou Yinli, Zhang Xing, Zhang Jianwei, Huang Youwen, Zeng Yugang, Cui Jinjiang, Liu Yun, Ning Yongqiang, Wang Lijun
Appl Opt. 2020 Oct 1;59(28):8789-8792. doi: 10.1364/AO.402699.
In this paper, a high-order distributed Bragg reflector (DBR) semiconductor laser operating at 1064 nm is demonstrated based on simulation analysis. To get optimal Bragg grating characteristics, four parameters of the Bragg grating were analyzed in detail. Forty-nine-order Bragg gratings were designed with a reflectivity of 6% and a FWHM of 3 nm, which can realize mode selection while lasing. The Bragg gratings were designed to maximize the use of light. Transmission of the rear laser facet is theoretically 0. This simulation result provides a simple and efficient DBR semiconductor laser scheme without cavity surface coating.
本文基于模拟分析展示了一种工作在1064nm的高阶分布布拉格反射镜（DBR）半导体激光器。为获得最佳布拉格光栅特性，详细分析了布拉格光栅的四个参数。设计了反射率为6%、半高宽为3nm的49阶布拉格光栅，其在激射时可实现模式选择。该布拉格光栅旨在最大程度地利用光。理论上后激光面的透射率为0。此模拟结果提供了一种无需腔面镀膜的简单高效的DBR半导体激光器方案。
