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Simulation and experimental research of a high-order Bragg grating semiconductor laser.

作者信息

E Siyu, Zhou YinLi, Zhang Xing, Zhang Jianwei, Zeng Yugang, Cui Jinjiang, Liu Yun, Ning Yongqiang, Wang Lijun

出版信息

Appl Opt. 2021 Jul 20;60(21):6076-6079. doi: 10.1364/AO.432175.

DOI:10.1364/AO.432175
PMID:34613271
Abstract

In this paper, the influence of the epitaxial structure on distributed Bragg reflector (DBR) grating characteristics is studied by simulation analysis. Comparative analysis shows that the symmetrical epitaxial structure can achieve a lower threshold current and, thus, a higher power. Based on the simulated structure, a DBR laser based on a symmetric epitaxial structure was fabricated, and a single longitudinal mode laser output at ∼1060 was obtained. The maximum power was 104.5 mW, and the side mode suppression ratio (SMSR) is 43 dB.

摘要

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