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通过氮注入湿氧化法生长三元铪钽氧化物薄膜及其特性研究

Growth and Characterization of Ternary Hf Ta O Films via Nitrogen-Infused Wet Oxidation.

作者信息

Quah Hock Jin, Ahmad Farah Hayati, Lim Way Foong, Hassan Zainuriah

机构信息

Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, 11800 Gelugor, Penang, Malaysia.

出版信息

ACS Omega. 2020 Oct 9;5(41):26347-26356. doi: 10.1021/acsomega.0c02120. eCollection 2020 Oct 20.

DOI:10.1021/acsomega.0c02120
PMID:33110962
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7581075/
Abstract

Nitrogen-infused wet oxidation at different temperatures (400-1000 °C) was employed to transform tantalum-hafnia to hafnium-doped tantalum oxide films. High-temperature wet oxidation at 1000 °C marked an onset of crystallization occurring in the film, accompanied with the formation of an interfacial oxide due to a reaction between the inward-diffusing hydroxide ions, which were dissociated from the water molecules during wet oxidation. The existence of nitrogen has assisted in controlling the interfacial oxide formation. However, high-temperature oxidation caused a tendency for the nitrogen to desorb and form N-H complex after reacting with the hydroxide ions. Besides, the presence of N-H complex implied a decrease in the passivation at the oxide-Si interface by hydrogen. As a consequence, defect formation would happen at the interface and influence the metal-oxide-semiconductor characteristics of the samples. In comparison, tantalum-hafnia subjected to nitrogen-infused wet oxidation at 600 °C has obtained the highest dielectric constant, the largest band gap, and the lowest slow trap density.

摘要

采用在不同温度（400 - 1000°C）下的氮气注入湿氧化法将钽铪转化为掺铪氧化钽薄膜。1000°C的高温湿氧化标志着薄膜中开始出现结晶，同时由于在湿氧化过程中从水分子离解的向内扩散的氢氧根离子之间的反应，形成了界面氧化物。氮的存在有助于控制界面氧化物的形成。然而，高温氧化导致氮有脱附的趋势，并在与氢氧根离子反应后形成N - H络合物。此外，N - H络合物的存在意味着氢使氧化物 - 硅界面处的钝化作用降低。因此，界面处会形成缺陷并影响样品的金属 - 氧化物 - 半导体特性。相比之下，在600°C下进行氮气注入湿氧化的钽铪具有最高的介电常数、最大的带隙和最低的慢陷阱密度。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/228f/7581075/1075b680c9ed/ao0c02120_0012.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/228f/7581075/c40561ca0fc5/ao0c02120_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/228f/7581075/c308387c1845/ao0c02120_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/228f/7581075/028dfcb3a271/ao0c02120_0006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/228f/7581075/8243821f21f3/ao0c02120_0007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/228f/7581075/eeab40f55731/ao0c02120_0008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/228f/7581075/026277e57e40/ao0c02120_0009.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/228f/7581075/1075b680c9ed/ao0c02120_0012.jpg

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本文引用的文献

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