Kingon AI, Maria JP, Streiffer SK
Department of Material Science and Engineering, North Carolina State University, Raleigh 27695, USA.
Nature. 2000 Aug 31;406(6799):1032-8. doi: 10.1038/35023243.
The silicon-based microelectronics industry is rapidly approaching a point where device fabrication can no longer be simply scaled to progressively smaller sizes. Technological decisions must now be made that will substantially alter the directions along which silicon devices continue to develop. One such challenge is the need for higher permittivity dielectrics to replace silicon dioxide, the properties of which have hitherto been instrumental to the industry's success. Considerable efforts have already been made to develop replacement dielectrics for dynamic random-access memories. These developments serve to illustrate the magnitude of the now urgent problem of identifying alternatives to silicon dioxide for the gate dielectric in logic devices, such as the ubiquitous field-effect transistor.
硅基微电子行业正迅速逼近一个节点，即器件制造不能再简单地按比例缩小到越来越小的尺寸。现在必须做出技术决策，这将极大地改变硅器件继续发展的方向。其中一个挑战是需要更高介电常数的电介质来替代二氧化硅，迄今为止，二氧化硅的特性对该行业的成功起到了至关重要的作用。人们已经付出了相当大的努力来开发用于动态随机存取存储器的替代电介质。这些进展有助于说明，为逻辑器件（如无处不在的场效应晶体管）的栅极电介质寻找二氧化硅替代品这一当前紧迫问题的严重性。
