Zhang Yan, Shinokita Keisuke, Watanabe Kenji, Taniguchi Takashi, Goto Masato, Kan Daisuke, Shimakawa Yuichi, Moritomo Yutaka, Nishihara Taishi, Miyauchi Yuhei, Matsuda Kazunari
Institute of Advanced Energy, Kyoto University, Uji, Kyoto, 611-0011, Japan.
Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan.
Adv Mater. 2020 Dec;32(50):e2003501. doi: 10.1002/adma.202003501. Epub 2020 Oct 28.
Optically generated excitonic states (excitons and trions) in transition metal dichalcogenides are highly sensitive to the electronic and magnetic properties of the materials underneath. Modulation and control of the excitonic states in a novel van der Waals (vdW) heterostructure of monolayer MoSe on double-layered perovskite Mn oxide ((La Nd ) Sr Mn O ) is demonstrated, wherein the Mn oxide transforms from a paramagnetic insulator to a ferromagnetic metal. A discontinuous change in the exciton photoluminescence intensity via dielectric screening is observed. Further, a relatively high trion intensity is discovered due to the charge transfer from metallic Mn oxide under the Curie temperature. Moreover, the vdW heterostructures with an ultrathin h-BN spacer layer demonstrate enhanced valley splitting and polarization of excitonic states due to the proximity effect of the ferromagnetic spins of Mn oxide. The controllable h-BN thickness in vdW heterostructures reveals a several-nanometer-long scale of charge transfer as well as a magnetic proximity effect. The vdW heterostructure allows modulation and control of the excitonic states via dielectric screening, charge carriers, and magnetic spins.
过渡金属二硫属化物中光学产生的激子态(激子和三激子)对其下方材料的电学和磁学性质高度敏感。本文展示了在双层钙钛矿锰氧化物((La Nd ) Sr Mn O )上的单层MoSe新型范德华(vdW)异质结构中激子态的调制和控制,其中锰氧化物从顺磁绝缘体转变为铁磁金属。通过介电屏蔽观察到激子光致发光强度的不连续变化。此外,由于居里温度以下金属锰氧化物的电荷转移,发现了相对较高的三激子强度。此外,具有超薄h-BN间隔层的vdW异质结构由于锰氧化物铁磁自旋的近邻效应,展示出增强的谷分裂和激子态极化。vdW异质结构中可控的h-BN厚度揭示了几纳米长尺度的电荷转移以及磁近邻效应。vdW异质结构允许通过介电屏蔽、电荷载流子和磁自旋对激子态进行调制和控制。