Suppr超能文献

二维半导体与双层钙钛矿锰氧化物范德华异质结构中的可控磁近邻效应与电荷转移

Controllable Magnetic Proximity Effect and Charge Transfer in 2D Semiconductor and Double-Layered Perovskite Manganese Oxide van der Waals Heterostructure.

作者信息

Zhang Yan, Shinokita Keisuke, Watanabe Kenji, Taniguchi Takashi, Goto Masato, Kan Daisuke, Shimakawa Yuichi, Moritomo Yutaka, Nishihara Taishi, Miyauchi Yuhei, Matsuda Kazunari

机构信息

Institute of Advanced Energy, Kyoto University, Uji, Kyoto, 611-0011, Japan.

Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan.

出版信息

Adv Mater. 2020 Dec;32(50):e2003501. doi: 10.1002/adma.202003501. Epub 2020 Oct 28.

Abstract

Optically generated excitonic states (excitons and trions) in transition metal dichalcogenides are highly sensitive to the electronic and magnetic properties of the materials underneath. Modulation and control of the excitonic states in a novel van der Waals (vdW) heterostructure of monolayer MoSe on double-layered perovskite Mn oxide ((La Nd ) Sr Mn O ) is demonstrated, wherein the Mn oxide transforms from a paramagnetic insulator to a ferromagnetic metal. A discontinuous change in the exciton photoluminescence intensity via dielectric screening is observed. Further, a relatively high trion intensity is discovered due to the charge transfer from metallic Mn oxide under the Curie temperature. Moreover, the vdW heterostructures with an ultrathin h-BN spacer layer demonstrate enhanced valley splitting and polarization of excitonic states due to the proximity effect of the ferromagnetic spins of Mn oxide. The controllable h-BN thickness in vdW heterostructures reveals a several-nanometer-long scale of charge transfer as well as a magnetic proximity effect. The vdW heterostructure allows modulation and control of the excitonic states via dielectric screening, charge carriers, and magnetic spins.

摘要

过渡金属二硫属化物中光学产生的激子态(激子和三激子)对其下方材料的电学和磁学性质高度敏感。本文展示了在双层钙钛矿锰氧化物((La Nd ) Sr Mn O )上的单层MoSe新型范德华(vdW)异质结构中激子态的调制和控制,其中锰氧化物从顺磁绝缘体转变为铁磁金属。通过介电屏蔽观察到激子光致发光强度的不连续变化。此外,由于居里温度以下金属锰氧化物的电荷转移,发现了相对较高的三激子强度。此外,具有超薄h-BN间隔层的vdW异质结构由于锰氧化物铁磁自旋的近邻效应,展示出增强的谷分裂和激子态极化。vdW异质结构中可控的h-BN厚度揭示了几纳米长尺度的电荷转移以及磁近邻效应。vdW异质结构允许通过介电屏蔽、电荷载流子和磁自旋对激子态进行调制和控制。

文献AI研究员

20分钟写一篇综述,助力文献阅读效率提升50倍。

立即体验

用中文搜PubMed

大模型驱动的PubMed中文搜索引擎

马上搜索

文档翻译

学术文献翻译模型,支持多种主流文档格式。

立即体验