Yu Huihui, Liao Qingliang, Kang Zhuo, Wang Zhenyu, Liu Baishan, Zhang Xiankun, Du Junli, Ou Yang, Hong Mengyu, Xiao Jiankun, Zhang Zheng, Zhang Yue
Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China.
State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China.
Small. 2020 Nov;16(47):e2005520. doi: 10.1002/smll.202005520. Epub 2020 Nov 2.
The atomic-thin 2D semiconductors have emerged as plausible candidates for future optoelectronics with higher performance in terms of the scaling process. However, currently reported 2D photodetectors still have huge shortcomings in ultraviolet and especially visible-blind wavelengths. Here, a simple and nontoxic surfactant-assisted synthesis strategy is reported for the controllable growth of atomically thin (1.5 to 4 nm) ZnO nanosheets with size ranging from 3 to 30 µm. Benefit from the short carbon chains and the water-soluble ability of sodium dodecyl sulfate (SDS), the synthesized ZnO nanosheets possess high crystal quality and clean surface, leading to good compatibility with traditional micromanufacturing technology and high sensitivity to UV light. The photodetectors constructed with ZnO demonstrate the highest responsivity (up to 2.0 × 10 A W ) and detectivity (D* = 6.83 × 10 Jones) at a visible-blind wavelength of 254 nm, and the photoresponse speed is optimized by the 400 °C annealing treatment (τ = 3.97 s, τ = 5.32 s), thus the 2D ZnO can serve as a promising material to fill in the gap for deep-UV photodetection. The method developed here opens a new avenue to controllably synthesize 2D nonlayered materials and accelerates their applications in high-performance optoelectronic devices.
原子级薄的二维半导体已成为未来光电子学中在缩放过程方面具有更高性能的合理候选材料。然而，目前报道的二维光电探测器在紫外光尤其是日盲波长方面仍存在巨大缺陷。在此，报道了一种简单且无毒的表面活性剂辅助合成策略，用于可控生长尺寸范围为3至30微米、原子级薄（1.5至4纳米）的氧化锌纳米片。受益于十二烷基硫酸钠（SDS）的短碳链和水溶性能力，合成的氧化锌纳米片具有高晶体质量和清洁表面，导致与传统微制造技术具有良好的兼容性以及对紫外光具有高灵敏度。用氧化锌构建的光电探测器在254纳米的日盲波长下表现出最高响应度（高达2.0×10 A/W）和探测率（D* = 6.83×10 Jones），并且通过400°C退火处理优化了光响应速度（τ = 3.97秒，τ = 5.32秒），因此二维氧化锌可作为一种有前途的材料来填补深紫外光探测的空白。这里开发的方法为可控合成二维非层状材料开辟了一条新途径，并加速了它们在高性能光电器件中的应用。
