Suppr超能文献

机械剥离二维SnS纳米片的压电响应

Piezoelectric Responses of Mechanically Exfoliated Two-Dimensional SnS Nanosheets.

作者信息

Wang Yichao, Vu Le-May, Lu Teng, Xu Chenglong, Liu Yun, Ou Jian Zhen, Li Yongxiang

机构信息

School of Engineering, RMIT University, Melbourne, VIC 3000, Australia.

Research School of Chemistry, The Australian National University, Canberra, ACT 2601, Australia.

出版信息

ACS Appl Mater Interfaces. 2020 Nov 18;12(46):51662-51668. doi: 10.1021/acsami.0c16039. Epub 2020 Nov 3.

Abstract

The emergence of piezoelectric properties in two-dimensional (2D) layered transition metal dichalcogenides (TMDs) has triggered the intensive research on using low dimensional materials for conversion of mechanical stimuli into electrical signals or vice versa. While the bulk intrinsically presents no piezoelectric property, the origin of the piezoelectric responses in their 2D thin planes is ascribed to the loss of centrosymmetry. There are also other categories of 2D layered materials such as post-transition metal dichalcogenides (PTMDs) that might be of interests, which have been confirmed theoretically and are yet to be fully explored experimentally. In this work, we investigate the thickness-dependent piezoelectric responses of 2D tin disulfide (SnS) nanosheets as a representative of layered PTMDs. The results indicate that the 2D SnS nanosheets with a thickness of ∼4 nm present an effective out-of-plane piezoelectric response of 2 ± 0.22 pm/V. Furthermore, the thickness dependence of the piezoelectric behavior at a resonant frequency shows that the piezoelectric coefficient decreases with increasing the thickness of 2D SnS nanosheets. Additionally, in reference to periodically poled lithium niobate piezoelectric crystal, the measured effective lateral piezoelectric coefficients at different voltages range from 0.61 to 1.55 pm/V with the average value at ∼1 pm/V. This study expands candidates for new piezoelectric materials in the 2D domain with comparable vertical and lateral coefficients, potentially opening a broader horizon for integration into sensors, actuators, and micro- and nanoelectromechanical systems.

摘要

二维(2D)层状过渡金属二硫属化物(TMDs)中压电特性的出现引发了对使用低维材料将机械刺激转换为电信号或反之亦然的深入研究。虽然其块体本身不具有压电特性,但其二维薄平面中压电响应的起源归因于中心对称性的丧失。还有其他类别的二维层状材料,如后过渡金属二硫属化物(PTMDs)可能也值得关注,它们已在理论上得到证实,但尚未通过实验进行充分探索。在这项工作中,我们研究了作为层状PTMDs代表的二维二硫化锡(SnS)纳米片的厚度依赖性压电响应。结果表明,厚度约为4 nm的二维SnS纳米片呈现出2±0.22 pm/V的有效面外压电响应。此外,在共振频率下压电行为的厚度依赖性表明,压电系数随着二维SnS纳米片厚度的增加而降低。此外,参照周期性极化的铌酸锂压电晶体,在不同电压下测得的有效横向压电系数范围为0.61至1.55 pm/V,平均值约为1 pm/V。这项研究扩展了二维领域中具有可比垂直和横向系数的新型压电材料的候选范围,可能为集成到传感器、致动器以及微纳机电系统中开辟更广阔的前景。

文献AI研究员

20分钟写一篇综述,助力文献阅读效率提升50倍。

立即体验

用中文搜PubMed

大模型驱动的PubMed中文搜索引擎

马上搜索

文档翻译

学术文献翻译模型,支持多种主流文档格式。

立即体验