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氢掺杂诱导金属氧化物材料中类金属超高自由载流子浓度以实现巨大且可调谐的等离子体共振

Hydrogen-Doping-Induced Metal-Like Ultrahigh Free-Carrier Concentration in Metal-Oxide Material for Giant and Tunable Plasmon Resonance.

作者信息

Zhu Qing, Jiang Shenlong, Ye Ke, Hu Wei, Zhang Jiachen, Niu Xiaoyou, Lin Yunxiang, Chen Shuangming, Song Li, Zhang Qun, Jiang Jun, Luo Yi

机构信息

Hefei National Laboratory for Physical Sciences at the Microscale, Department of Chemical Physics, Synergetic Innovation Center of Quantum Information and Quantum Physics, National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China.

出版信息

Adv Mater. 2020 Dec;32(50):e2004059. doi: 10.1002/adma.202004059. Epub 2020 Nov 10.

Abstract

The practical utilization of plasmon-based technology relies on the ability to find high-performance plasmonic materials other than noble metals. A key scientific challenge is to significantly increase the intrinsically low concentration of free carriers in metal-oxide materials. Here, a novel electron-proton co-doping strategy is developed to achieve uniform hydrogen doping in metal-oxide MoO at mild conditions, which creates a metal-like ultrahigh free-carrier concentration approaching that of noble metals (10 cm in H MoO versus 10 cm in Au/Ag). This bestows giant and tunable plasmonic resonances in the visible region to this originally semiconductive material. Using ultrafast spectroscopy characterizations and first-principle simulations, the formation of a quasi-metallic energy band structure that leads to long-lived and strong plasmonic field is revealed. As verified by the surface-enhanced Raman spectra (SERS) of rhodamine 6G molecules on H MoO , the SERS enhancement factor reaches as high as 1.1 × 10 with a detection limit at concentration as low as 1 × 10  mol L , representing the best among the hitherto reported non-metal systems. The findings not only provide a set of metal-like semiconductor materials with merits of low cost, tunable electronic structure, and plasmonic resonance, but also a general strategy to induce tunable ultrahigh free-carrier concentration in non-metal systems.

摘要

基于等离激元的技术的实际应用依赖于找到除贵金属之外的高性能等离激元材料的能力。一个关键的科学挑战是显著提高金属氧化物材料中本征低浓度的自由载流子。在此,开发了一种新颖的电子 - 质子共掺杂策略,以在温和条件下实现金属氧化物MoO中的均匀氢掺杂,这创造了一种接近贵金属的类金属超高自由载流子浓度(H MoO中为10 cm,而Au/Ag中为10 cm)。这赋予了这种原本的半导体材料在可见光区域巨大且可调谐的等离激元共振。通过超快光谱表征和第一性原理模拟,揭示了导致长寿命和强等离激元场的准金属能带结构的形成。通过H MoO上罗丹明6G分子的表面增强拉曼光谱(SERS)验证,SERS增强因子高达1.1×10,检测限低至1×10 mol L,代表了迄今为止报道的非金属系统中的最佳性能。这些发现不仅提供了一组具有低成本、可调电子结构和等离激元共振优点的类金属半导体材料,还提供了一种在非金属系统中诱导可调超高自由载流子浓度的通用策略。

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