常压光电子能谱揭示的近实际环境下 GaAs(100) 的初始氧化
Initial oxidation of GaAs(100) under near-realistic environments revealed by AP-XPS.
作者信息
Toyoshima Ryo, Murakami Shunya, Eguchi Shinsuke, Amemiya Kenta, Mase Kazuhiko, Kondoh Hiroshi
机构信息
Department of Chemistry, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama, Kanagawa 223-8522, Japan.
Institute of Materials Structure Science, High Energy Accelerator Research Organization, and SOKENDAI (The Graduate University for Advanced Studies), 1-1 Oho, Tsukuba, Ibaraki 305-0801, Japan.
出版信息
Chem Commun (Camb). 2020 Nov 26;56(94):14905-14908. doi: 10.1039/d0cc05279e.
In situ monitoring of initial oxidation of GaAs surfaces was performed under (near-) realistic oxidizing environments, using ambient-pressure X-ray photoelectron spectroscopy (AP-XPS). The surface chemical states drastically change with time. The oxidation process at the sub-nano-meter-scale exhibits a significantly small activation energy, which can be regarded as a quasi-barrier-less oxidation.
利用常压X射线光电子能谱（AP-XPS）在（近）实际氧化环境下对砷化镓表面的初始氧化进行原位监测。表面化学状态随时间急剧变化。亚纳米尺度的氧化过程表现出显著小的活化能，这可被视为一种准无势垒氧化。
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