Chu Zhaodong, Regan Emma C, Ma Xuejian, Wang Danqing, Xu Zifan, Utama M Iqbal Bakti, Yumigeta Kentaro, Blei Mark, Watanabe Kenji, Taniguchi Takashi, Tongay Sefaattin, Wang Feng, Lai Keji
Department of Physics, The University of Texas at Austin, Austin, Texas 78712, USA.
Department of Physics, University of California at Berkeley, Berkeley, California 94720, USA.
Phys Rev Lett. 2020 Oct 30;125(18):186803. doi: 10.1103/PhysRevLett.125.186803.
We report the nanoscale conductivity imaging of correlated electronic states in angle-aligned WSe_{2}/WS_{2} heterostructures using microwave impedance microscopy. The noncontact microwave probe allows us to observe the Mott insulating state with one hole per moiré unit cell that persists for temperatures up to 150 K, consistent with other characterization techniques. In addition, we identify for the first time a Mott insulating state at one electron per moiré unit cell. Appreciable inhomogeneity of the correlated states is directly visualized in the heterobilayer region, indicative of local disorders in the moiré superlattice potential or electrostatic doping. Our work provides important insights on 2D moiré systems down to the microscopic level.
我们报告了使用微波阻抗显微镜对角度对齐的WSe₂/WS₂异质结构中相关电子态进行的纳米级电导率成像。非接触式微波探头使我们能够观察到每莫尔晶胞有一个空穴的莫特绝缘态,该态在高达150 K的温度下持续存在,这与其他表征技术一致。此外,我们首次识别出每莫尔晶胞有一个电子的莫特绝缘态。在异质双层区域直接观察到相关态明显的不均匀性,这表明莫尔超晶格势或静电掺杂中存在局部无序。我们的工作为二维莫尔系统提供了直至微观层面的重要见解。