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超薄铁电体中界面邻近效应的原位监测

In-situ monitoring of interface proximity effects in ultrathin ferroelectrics.

作者信息

Strkalj Nives, Gattinoni Chiara, Vogel Alexander, Campanini Marco, Haerdi Rea, Rossi Antonella, Rossell Marta D, Spaldin Nicola A, Fiebig Manfred, Trassin Morgan

机构信息

Department of Materials, ETH Zurich, 8093, Zurich, Switzerland.

Electron Microscopy Center, Swiss Federal Laboratories for Materials Science and Technology, Empa, 8600, Dübendorf, Switzerland.

出版信息

Nat Commun. 2020 Nov 16;11(1):5815. doi: 10.1038/s41467-020-19635-7.

Abstract

The development of energy-efficient nanoelectronics based on ferroelectrics is hampered by a notorious polarization loss in the ultrathin regime caused by the unscreened polar discontinuity at the interfaces. So far, engineering charge screening at either the bottom or the top interface has been used to optimize the polarization state. Yet, it is expected that the combined effect of both interfaces determines the final polarization state; in fact the more so the thinner a film is. The competition and cooperation between interfaces have, however, remained unexplored so far. Taking PbTiO as a model system, we observe drastic differences between the influence of a single interface and the competition and cooperation of two interfaces. We investigate the impact of these configurations on the PbTiO polarization when the interfaces are in close proximity, during thin-film synthesis in the ultrathin limit. By tailoring the interface chemistry towards a cooperative configuration, we stabilize a robust polarization state with giant polarization enhancement. Interface cooperation hence constitutes a powerful route for engineering the polarization in thin-film ferroelectrics towards improved integrability for oxide electronics in reduced dimension.

摘要

基于铁电体的节能纳米电子学的发展受到阻碍,这是由于界面处未屏蔽的极性不连续性在超薄状态下导致了臭名昭著的极化损耗。到目前为止,通过在底部或顶部界面进行工程电荷筛选来优化极化状态。然而,可以预期的是,两个界面的综合效应决定了最终的极化状态;实际上,薄膜越薄,这种影响就越明显。然而,到目前为止,界面之间的竞争与合作仍未得到探索。以PbTiO为模型系统,我们观察到单个界面的影响与两个界面的竞争与合作之间存在巨大差异。我们研究了在超薄极限下薄膜合成过程中,当界面紧密相邻时,这些配置对PbTiO极化的影响。通过将界面化学调整为协同配置,我们稳定了具有巨大极化增强的稳健极化状态。因此,界面合作构成了一条强大的途径,可用于在薄膜铁电体中设计极化,以提高氧化物电子学在减小尺寸下的集成性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a0b5/7669862/5779b06d2683/41467_2020_19635_Fig1_HTML.jpg

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