Strkalj Nives, Gradauskaite Elzbieta, Nordlander Johanna, Trassin Morgan
Department of Materials, ETH Zurich, Vladimir-Prelog-Weg 4, 8093 Zurich, Switzerland.
Materials (Basel). 2019 Sep 24;12(19):3108. doi: 10.3390/ma12193108.
The current burst of device concepts based on nanoscale domain-control in magnetically and electrically ordered systems motivates us to review the recent development in the design of domain engineered oxide heterostructures. The improved ability to design and control advanced ferroic domain architectures came hand in hand with major advances in investigation capacity of nanoscale ferroic states. The new avenues offered by prototypical multiferroic materials, in which electric and magnetic orders coexist, are expanding beyond the canonical low-energy-consuming electrical control of a net magnetization. Domain pattern inversion, for instance, holds promises of increased functionalities. In this review, we first describe the recent development in the creation of controlled ferroelectric and multiferroic domain architectures in thin films and multilayers. We then present techniques for probing the domain state with a particular focus on non-invasive tools allowing the determination of buried ferroic states. Finally, we discuss the switching events and their domain analysis, providing critical insight into the evolution of device concepts involving multiferroic thin films and heterostructures.
当前基于磁电有序系统中纳米尺度畴控制的一系列器件概念,促使我们回顾畴工程氧化物异质结构设计的最新进展。设计和控制先进铁电畴结构能力的提高,与纳米尺度铁电态研究能力的重大进步同步发展。典型的多铁性材料中电序和磁序共存,其提供的新途径正超越对净磁化强度的传统低能耗电控制。例如,畴图案反转有望增加功能。在本综述中,我们首先描述在薄膜和多层膜中创建可控铁电和多铁性畴结构的最新进展。然后,我们介绍探测畴态的技术,特别关注允许确定埋藏铁电态的非侵入性工具。最后,我们讨论开关事件及其畴分析,为涉及多铁性薄膜和异质结构的器件概念的演变提供关键见解。