Guo Jiacong, Geng Jianzhao, Tian Guofeng, Ji Deyang, Qi Shengli, Wu Dezhen
State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing, 100029, China.
Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin, 300072, China.
Small. 2020 Dec;16(49):e2005659. doi: 10.1002/smll.202005659. Epub 2020 Nov 17.
Compared with typical binary polymeric memory materials, functional polymers with ternary memory performance possess significant potential to achieve ultra-high-density data storage. The reported ternary memory polymers are normally driven by dual-mechanism. However, the involved thermodynamically unstable mechanisms (field-induced conformation change or conductive filament formation/fracture) may result in the poor reliability of memory devices under high-temperature working atmosphere. Another strategy to realize ternary memory is introducing charge trapping/de-trapping mechanism by attaching charge trap atom/group at electron donor, which is proved not always effective. Moreover, the synergistic two mechanisms may have difficulty for clarifying the relationship between memory performance and chemical structures, which is the core issue of polymer memory materials. Besides, some multi-level memory materials need the cooperative participation of artificially setting compliance current, which is the extension of typical binary memory and may cause a more complicated technique and logic circuit. Herein, based on charge-transfer mechanism, a concise and effective strategy to realize ternary memory application is proposed. By inserting a Zn ion, the charge-transfer process occurring in electron donors can lead to the novel electrical tri-stability memory behaviors. This work can provide a novel idea for achieving reliable and intrinsic ternary high-density data storage applications.
与典型的二元聚合物存储材料相比，具有三元存储性能的功能聚合物在实现超高密度数据存储方面具有巨大潜力。已报道的三元存储聚合物通常由双机制驱动。然而，所涉及的热力学不稳定机制（场诱导构象变化或导电细丝形成/断裂）可能导致存储器件在高温工作环境下可靠性较差。实现三元存储的另一种策略是通过在电子供体处附着电荷陷阱原子/基团来引入电荷俘获/去俘获机制，但事实证明这种方法并非总是有效。此外，这两种协同机制可能难以阐明存储性能与化学结构之间的关系，而这正是聚合物存储材料的核心问题。此外，一些多级存储材料需要人工设置顺应电流的协同参与，这是典型二元存储的扩展，可能会导致更复杂的技术和逻辑电路。在此，基于电荷转移机制，提出了一种简洁有效的实现三元存储应用的策略。通过插入锌离子，电子供体中发生的电荷转移过程可导致新型的电三稳态存储行为。这项工作可为实现可靠且固有的三元高密度数据存储应用提供新思路。
