Janica Iwona, Iglesias Daniel, Ippolito Stefano, Ciesielski Artur, Samorì Paolo
Faculty of Chemistry, Adam Mickiewicz University in Poznań, Uniwersytetu Poznańskiego 8, 61-614 Poznań, Poland.
Chem Commun (Camb). 2020 Dec 25;56(99):15573-15576. doi: 10.1039/d0cc06792j. Epub 2020 Nov 27.
A systematic investigation of the experimental conditions for the chemical exfoliation of MoS using n-butyllithium as intercalating agent has been carried out to unravel the effect of reaction time and temperature for maximizing the percentage of monolayer thick-flakes and achieve a control over the content of metallic 1T vs. semiconductive 2H phases, thereby tuning the electrical properties of ultrathin MoS few-layer thick films.
已对使用正丁基锂作为插层剂对二硫化钼进行化学剥离的实验条件进行了系统研究,以揭示反应时间和温度对使单层厚薄片百分比最大化的影响,并实现对金属1T相和半导体2H相含量的控制,从而调节超薄二硫化钼少层厚膜的电学性质。