Poojitha Bommareddy, Reddy B H, Joshi Aprajita, Kumar Ankit, Ali Asif, Singh R S, Saha Surajit
Department of Physics, Indian Institute of Science Education and Research, Bhopal 462066, India.
J Phys Condens Matter. 2021 Mar 10;33(10):105601. doi: 10.1088/1361-648X/abcf60.
Here we have investigated the role of electron phonon coupling on the Raman spectrum of narrow bandgap semiconductors APdO (A = Ca, Sr) and hole-doped system SrLiPdO. Four Raman active phonons are observed at room temperature for all three compounds as predicted by factor group analysis. The lowest energy phonon (∼190/202 cm) associated with Pd vibrations is observed to exhibit an asymmetric Fano-like lineshape in all the three compounds, indicating the presence of an interaction between the phonon and the electronic continuum. The origin of the electronic continuum states and electron-phonon coupling are discussed based on our laser power- and temperature-dependent Raman results. We have observed an enhanced strength of electron-phonon coupling in SrLiPdO at low temperatures which can be attributed to the metallicity in this doped compound.
在此，我们研究了电子 - 声子耦合在窄带隙半导体APdO（A = Ca，Sr）和空穴掺杂体系SrLiPdO的拉曼光谱中的作用。如因子群分析所预测的，在室温下观察到所有这三种化合物都有四个拉曼活性声子。与Pd振动相关的最低能量声子（~190/202 cm）在所有这三种化合物中都表现出不对称的类法诺线形，这表明声子与电子连续体之间存在相互作用。基于我们的激光功率和温度相关的拉曼结果，讨论了电子连续体状态和电子 - 声子耦合的起源。我们观察到在低温下SrLiPdO中电子 - 声子耦合强度增强，这可归因于这种掺杂化合物中的金属性。
