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不同金属对平板塔姆表面等离激元谐振器性能的影响

Impact of Different Metals on the Performance of Slab Tamm Plasmon Resonators.

作者信息

Pühringer Gerald, Consani Cristina, Jakoby Bernhard

机构信息

Institute for Microelectronics and Microsensors, Johannes Kepler University, 4040 Linz, Austria.

Silicon Austria Labs GmbH, 9524 Villach, Austria.

出版信息

Sensors (Basel). 2020 Nov 28;20(23):6804. doi: 10.3390/s20236804.

Abstract

We investigate the concept of slab Tamm plasmons (STP) in regard to their properties as resonant absorber or emitter structures in the mid-infrared spectral region. In particular, we compare the selective absorption characteristics resulting from different choices of absorbing material, namely Ag, W, Mo or highly doped Si. We devised a simplified optimization procedure using finite element simulations for the calculation of the absorption together with the application of micro-genetic algorithm (GA) optimization. As characteristic for plasmonic structures, the specific choice of the metallic absorber material strongly determines the achievable quality factor (). We show that STP absorbers are able to mitigate the degradation of for less reflective metals or even non-metals such as doped silicon as plasmonic absorber material. Moreover, our results strongly indicate that the maximum achievable plasmon-enhanced absorption does not depend on the choice of the plasmonic material presuming an optimized configuration is obtained via the GA process. As a result, absorptances in the order of 50-80% could be achieved for any absorber material depending on the slab thickness (up to 1.1 µm) and a target resonance wavelength of 4.26 µm (CO absorption line). The proposed structures are compatible with modern semiconductor mass fabrication processes. At the same time, the optimization procedure allows us to choose the best plasmonic material for the corresponding application of the STP structure. Therefore, we believe that our results represent crucial advances towards corresponding integrated resonant absorber and thermal emitter components.

摘要

我们研究了平板塔姆等离子体激元(STP)的概念,涉及其作为中红外光谱区域中谐振吸收器或发射器结构的特性。特别是,我们比较了由不同吸收材料(即Ag、W、Mo或高掺杂Si)选择所产生的选择性吸收特性。我们设计了一种简化的优化程序,使用有限元模拟来计算吸收,并应用微遗传算法(GA)进行优化。作为等离子体激元结构的特性,金属吸收材料的具体选择强烈地决定了可实现的品质因数()。我们表明,对于反射性较低的金属甚至诸如掺杂硅作为等离子体激元吸收材料的非金属,STP吸收器能够减轻品质因数的下降。此外,我们的结果强烈表明,假定通过GA过程获得了优化配置,那么可实现的最大等离子体增强吸收并不取决于等离子体激元材料的选择。结果,根据平板厚度(高达1.1 µm)和目标共振波长4.26 µm(CO吸收线),任何吸收材料都可以实现50 - 80%量级的吸收率。所提出的结构与现代半导体大规模制造工艺兼容。同时,优化程序使我们能够为STP结构的相应应用选择最佳的等离子体激元材料。因此,我们相信我们的结果代表了朝着相应的集成谐振吸收器和热发射器组件取得的关键进展。

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